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Journal of Electronic Materials
Published in: Journal of Electronic Materials 8/2002

01-08-2002 | Special Issue Paper

The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Authors: Changhyun Yi, Robert A. Metzger, April S. Brown

Published in: Journal of Electronic Materials | Issue 8/2002

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Metadata
Title
The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors
Authors
Changhyun Yi
Robert A. Metzger
April S. Brown
Publication date
01-08-2002
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 8/2002
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-002-0193-5

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