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Measurement Techniques
Published in: Measurement Techniques 3/2013

01-06-2013

The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor

Authors: V. V. Amelichev, R. D. Tikhonov, A. A. Cheremisinov

Published in: Measurement Techniques | Issue 3/2013

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Abstract

The sensitivity and initial voltage offset between the collectors of a two-collector lateral bipolar npn-type magnetotransistor with a base formed in the well, which serves as the third collector, are investigated experimentally. It is shown that the voltage magnetosensitivity reaches 11 V/T in a circuit with a common bias of the base and the well, and that one can obtain an initial voltage offset between the collectors of less than 1 mV.
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Literature
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L. J. Ristic et al., “Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection,” IEEE Electr. Dev. Lett., EDL-8, No. 9, 395-397 (1987).CrossRef
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V. V. Amelichev et al., “Modeling of a bipolar dual-collector magnetotransistor and the determination of the thermal compensation of the change in sensitivity,” Datch. Sistemy, No. 6, 38-42 (1999).
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A. V. Kozlov et al., “An investigation of the conversion mechanisms and relative magnetosensitivity of a triple-collector magnetosensitive transistor,” Mikroelektronika, 32, No. 3, 219-225 (2003).
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R. D. Tikhonov, A. V. Kozlov, and S. A. Polomoshnov, “Offset of the potentials of a dual-collector lateral bipolar magnetotransistor,” Izmer. Tekhn., No. 8, 57-61 (2008); Measur. Techn., 51, No. 8, 896-902 (2008).
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Metadata
Title
The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor
Authors
V. V. Amelichev
R. D. Tikhonov
A. A. Cheremisinov
Publication date
01-06-2013
Publisher
Springer US
Published in
Measurement Techniques / Issue 3/2013
Print ISSN: 0543-1972
Electronic ISSN: 1573-8906
DOI
https://doi.org/10.1007/s11018-013-0201-6

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