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Journal of Materials Science
Published in: Journal of Materials Science 21/2015

01-11-2015 | Original Paper

The improved resistive switching of HfO2:Cu film with multilevel storage

Authors: Tingting Guo, Tingting Tan, Zhengtang Liu

Published in: Journal of Materials Science | Issue 21/2015

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Abstract

The Cu-doped and undoped HfO2 films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO2 film was demonstrated. Improvements in ON/OFF ratio and switching parameters were observed. The multilevel behavior of Cu/HfO2:Cu/Si sample was also investigated by controlling the current compliance during set process and at least three low resistance states (LRSs) for data storage could be obtained. The three LRSs and the high resistance state can be distinguished in a range of 103 and the HfO2:Cu sample exhibited good reliability. The RS behavior of HfO2:Cu sample can be well interpreted by the proposed filamentary model. The oxygen vacancies and Cu ions in the film are both responsible for the RS behaviors.
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Metadata
Title
The improved resistive switching of HfO2:Cu film with multilevel storage
Authors
Tingting Guo
Tingting Tan
Zhengtang Liu
Publication date
01-11-2015
Publisher
Springer US
Published in
Journal of Materials Science / Issue 21/2015
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-9257-9

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