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Published in:
09-01-2017
The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer
Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2017
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Abstract
We presented the epitaxial growth of n-GaN films on n-SiC substrates with n-Al0.3Ga0.7N buffer and SiNx interlayer by metal organic vapor phase epitaxy. In order to optimize the properties of n-GaN films, a comparative investigation was performed by modifying SiNx deposition time and its insert location. Under the optimal growth parameters of SiNx, the full width at half maximum values of GaN \((0002)\) and \((10\bar{1}2)\) diffraction peaks effectively reduced to 208 and 226 arcsec, respectively. Simultaneously, molten NaOH based wet etchings were used to verify the reduction of the dislocation densities in GaN films. Good vertical conducting characteristics in n-GaN/n-SiC homo-type heterojunction were achieved by inserting SiNx into n-GaN film. Additionally, Raman and low-temperature photoluminescence measurements were employed to determine the stress state in GaN film.