Theoretical Calculation of a Charged Particle Detector’s Response Fabricated by Semi Insulating (SI) GaAs

In the present work we have conducted theoretical calculations of the transient response of SI GaAs radiation detectors. The detector under consideration is a typical reverse biased Schottky diode of high purity undopped GaAs or compensated material. The electrical characteristics of the “dark” equilibrium state, derived by the Poisson and continuity equations, indicate that in the compensated detector is established a wider active region [1]. We considered that the detector operates in pulse or current mode. In pulse mode, a single charged particle (i.e. proton, a—particle) incidents the detector on either the Schottky or ohmic contact, whereas in current mode the detector is irradiated by a short-lived particle beam.