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2018 | OriginalPaper | Chapter

Towards Voltage-Driven Nano-Spintronics: A Review

Authors : Jin Zhang, Eva Pellicer, Jordi Sort

Published in: Commercialization of Nanotechnologies–A Case Study Approach

Publisher: Springer International Publishing

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Abstract

Nano-spintronics or nano-spin-electronics is a highly emergent technology that has revolutionized information and communication technologies offering non-volatility in high-density recorded information and an increase of the data processing speed by exploiting both the fundamental charge of electrons as well as their spin degree of freedom in nanoscale devices. The utilization of electric currents, though, poses a challenge in terms of minimization of electric power consumption. Magnetic storage systems and magneto-electronic devices are conventionally controlled by means of magnetic fields (via electromagnetic induction) or using spin-polarized electric currents (spin-transfer torque). Both principles involve significant energy loss by heat dissipation (Joule effect). The replacement of electric current with voltage (or electric field) to control the processing of information would drastically reduce the overall power consumption. Strain-mediated magneto-electric coupling in piezoelectric-magnetostrictive bilayers might appear a proper strategy to achieve this goal. However, this approach is not so suitable in spintronics because of the clamping effects with the substrate, need of epitaxial interfaces and risk of fatigue-induced mechanical failure. The exciting possibility to control ferromagnetism of metals and semiconductors directly with electric field (without strain) has been reported in recent years, but most significant effects occur below 300 K and only in ultra-thin films and nanoparticles. Herein, we provide an overview of the progress in voltage-driven magneto-electric effects in different types of magnetic materials and systems at the nanoscale. The possibility to use these effects in real applications (e.g., electrically-assisted high-density recording media, magnetic random access memories and spin field effect transistors) is described. The ongoing progress in the understanding of these effects is likely to open new paradigms in the field of spintronics and will certainly have a high economic transcendence.

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Albert FJ, Katine JA, Buhrman RA et al (2000) Spin-polarized current switching of a Co thin film nanomagnet. Appl Phys Lett 77:3809–3811CrossRef

Astrov DN (1960) The magnetoelectric effect in antiferromagnetics. J Exp Theor Phys 38:708–709

Baibich MN, Broto JM, Fert A et al (1998) Giant magnetoresitance of (001)Fe/(001)Cr magnetic super lattice. Phys Rev Lett 61:2472–2475CrossRef

Barnes SE, Leda J, Maekawa S (2014) Rashba spin-orbit anisotropy and the electric field control of magnetism. Sci Rep 4:4105CrossRef

Binasch G, Grünberg P, Saurenbach F et al (1989) Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys Rev B 39:4828–4830CrossRef

Bonell F, Murakami S, Shiota Y et al (2011) Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films. Appl Phys Lett 98:232510CrossRef

Bychkov YA, Rashba ÉI (1984) Properties of a 2D electron gas with lifted spectral degeneracy. JETP Lett 39:78–81

Cherifi RO, Ivanovskaya V, Philips LC et al (2014) Electric-field control of magnetic order above room temperature. Nat Mater 13:345–351CrossRef

Chiba D, Yamanouchi M, Matsukura F et al (2003) Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor. Science 301:943–945CrossRef

Chiba D, Sawichi M, Nishitani Y et al (2008) Magnetization vector manipulation by electric field. Nature 455:515–518CrossRef

Chiba D, Fukami S, Shimamura K et al (2011) Electrical control of the ferromagnetic phase transition in cobalt at room temperature. Nat Mater 10:853–856CrossRef

Coey JMD, Venkatesan M, Fitzgerald CB (2005) Donor impurity band exchange in dilute ferromagnetic oxides. Nat Mater 4:173–179CrossRef

Cormier M, Ferré J, Mougin A et al (2008) High resolution polar Kerr magnetometer for nanomagnetism and nanospintronics. Rev Sci Instrum 79:033706CrossRef

Curie P (1894) Sur la symétrie dans les phénomènes physiques, symétrie d’un champ électrique et d’un champ magnétique. J Phys Theor Appl 3:393–415CrossRefMATH

Datta S, Das B (1990) Electronic analog of the electro-optic modulator. Appl Phys Lett 56:664CrossRef

Dieny B, Speriosu VS, Metin S et al (1991) Magnetotransport properties of magnetically soft spin-valve structures. J Appl Phys 69:4774–4779CrossRef

Dieny B, Sousa RC, Hérault J et al (2010) Spin-transfer effect and its use in spintronic components. Int J Nanotechnol 7:591–614CrossRef

Fiederling R, Keim M, Reuscher G et al (1999) Injection and detection of a spin-polarized current in a light-emitting diode. Nature 402:787–790CrossRef

Hoffmann A (2013) Spin hall effects in metal. IEEE Trans Magn 49:5172–5193CrossRef

Hu JM, Li Z, Chen LQ et al (2011) High-density magnetoresistive random access memory operating at ultralow voltage at room temperature. Nat Commun 2:553CrossRef

Hu J, Haratipour N, Koester SJ (2015) The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices. J Appl Phys 117:17B524CrossRef

Huai Y (2008) Spin-transfer torque MRAM (STT-MRAM): challenges and prospects. AAPPS Bulletin 18:33–40

Huang YW, Lo CK, Yao YD et al (2004) Giant magnetocurrent in silicon-base magnetic tunneling transistor. J Magn Magn Mater 282:279–282CrossRef

Kim HKD, Schelhas LT, Keller S et al (2013) Magnetoelectric control of superparamagnetism. Nano lett 13:884–88

Koo HC, Yi H, Ko JB et al (2007) Electrical spin injection and detection in an InAs quantum well. Appl Phys Lett 90:022101CrossRef

Koo HC, Kwonj H, Eom J et al (2009) Control of spin precession in a spin-injected field effect transistor. Science 325:1515–1518CrossRef

Lou X, Adelmann C, Crooker SA, Crowell PA et al (2007) Electrical detection of spin transport in lateral ferromagnet–semiconductor devices. Nat Phys 3:197–202CrossRef

Maruyama T, Shiota Y, Nozaki T et al (2009) Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat Nanotech 4:158–161CrossRef

Matsumoto Y, Murakami M, Shono T et al (2001) Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide. Science 291:854–856CrossRef

Moodera JS, Kinder LR, Wong TM et al (1995) Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys Rev Lett 74:3273–3276CrossRef

Nakamura K, Shimabukura R, Fujiwara Y et al (2009) Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field. Phys Rev Lett 102:187201CrossRef

Ohno Y, Young DK, Beschoten B et al (1999) Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402:790–792CrossRef

Ohno H, Chiba D, Matsukura F et al (2000) Electric-field control of ferromagnetism. Nature 408:944–946CrossRef

Ovchinnikov IV, Wang KL (2009) Theory of electric-field-controlled surface ferromagnetic transition in metals. Phys Rev B 79:020402(R)CrossRef

Pippard AB (2009) Magnetoresistance in metals. Cambridge University Press, New York

Prejbeanu IL, Kerekes M, Sousa RC et al (2007) Thermally assisted MRAM. J Phys: Condens Matter 19:165218

Prenat G, Jabeur K, Pendina GD et al (2015) Spintronics-based computing. In: Zhao W, Prenat G (eds) Spin orbit torque RAM SOT-MRAM for high speed and high reliability applications. Springer International Publishing, Switzerland, pp 145–157

Ralph DC, Cui YT, Liu LQ et al (2011) Spin-transfer torque in nanoscale magnetic devices. Philos Trans R Soc A 369:3617–3630CrossRef

Ramesh R, Spaldin NA (2007) Multiferroics: progress and prospects in thin films. Nat Mater 6:21–29CrossRef

Saitoh E, Ueda M, Miyajima H et al (2006) Conversion of spin current into charge current at room temperature: inverse spin-Hall effect. Appl Phys Lett 88:182509CrossRef

Scheid M, Bercioux D, Richter K (2007) Zeeman ratchets: pure spin current generation in mesoscopic conductors with non-uniform magnetic fields. New J Phys 9:401CrossRef

Schmid H (1994) Multi-ferroic magnetoelectrics. Ferroelectrics 162:317–338CrossRef

Scogland T, Subramaniam B, Feng W (2013) The Green500 list: escapades to exascale. Comput Sci Res Dev 28:109–117CrossRef

Shiota Y, Nozaki T, Bonell F et al (2011) Induction of coherent magnetization switching in a few atomic layer of FeCo using voltage pulses. Nat Mater 11:39–43CrossRef

Slonczewski JC (1996) Current-driven excitation of magnetic multilayers. J Magn Magn Mater 159:L1–L7CrossRef

Sort J, Baltz V, Garcia F et al (2005) Tailoring perpendicular exchange bias in [Pt/Co]-IrMn multilayers. Phys Rev B 71:054411CrossRef

Stolichnov I, Riester SWE, Trodahl HJ et al (2008) Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As. Nat Mater 7:464–467CrossRef

Teyssedre G, Laurent C (2013) Advances in high-field insulating polymeric materials over the past 50 years. IEEE Electr Insul Mag 29:26–36CrossRef

Valenzuela SO, Tinkham M (2006) Direct electronic measurement of the spin Hall effect. Nature 442:176–179CrossRef

Wang Y, Hu J, Lin Y et al (2010) Multiferroic magnetoelectric composite nanostructures. NPG Asia mater 2:61–68CrossRef

Wang W, Li M, Hageman S et al (2012) Electric-field-assisted switching in magnetic tunnel junctions. Nat Mater 11:64–68CrossRef

Weisheit M, Fähler S, Marty A et al (2007) Electric field-induced modification of magnetism in thin-film ferromagnets. Science 315:349–351CrossRef

Wiesendanger R, Güntherodt HJ (1990) Observation of vacuum tunneling of spin-polarized electrons with the scanning tunneling microscope. Phys Rev Lett 65:247–250CrossRef

Wolf SA, Awschalom DD, Buhrman RA et al (2001) Spintronics: a spin-based electronics vision for the future. Science 294:1488–1495CrossRef

Yamada Y, Ueno K, Fukumura T et al (2011) Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide. Science 332:1065–1067CrossRef

Zhernenkov M, Fitzsimmons MR, Chlistunoff J, Majewshi J (2010) Electric-field modification of magnetism in a thin CoPd film. Phys Rev B 82:024420CrossRef

Žutić I, Fabian J, Sarma SD (2004) Spintronics: fundamentals and applications. Rev Mod Phys 76:323–410CrossRef

Title: Towards Voltage-Driven Nano-Spintronics: A Review
Authors: Jin Zhang
Eva Pellicer
Jordi Sort
Publisher: Springer International Publishing
Book: Commercialization of Nanotechnologies–A Case Study Approach
Print ISBN: 978-3-319-56978-9

Electronic ISBN: 978-3-319-56979-6

Copyright Year: 2018
DOI: https://doi.org/10.1007/978-3-319-56979-6_5