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Journal of Computational Electronics

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17-02-2020

3-D Monte Carlo device simulator for variability modeling of p-MOSFETs

Authors: Vinicius V. A. Camargo, Alan C. J. Rossetto, Dragica Vasileska, Gilson I. Wirth

Published in: Journal of Computational Electronics | Issue 2/2020

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Abstract

A device simulator for p-MOSFETs, based on the Monte Carlo method for the solution of the Boltzmann transport equation, was developed, and results and implementation challenges are presented and discussed in detail in this paper. By using a Monte Carlo device simulator (MCDS), it is possible to consider effects that affect state-of-the-art devices that cannot be adequately considered using other methods (drift–diffusion, hydrodynamic, etc.). Novel feature of the simulator is that it treats hole–hole and hole–impurity interactions in real space using particle–particle–particle–mesh coupling method, allowing the simulator to account for random dopant fluctuation and charged traps, responsible for random telegraph noise and bias temperature instability, while having a small computational cost enabling statistical simulations. The MCDS shows excellent agreement between experimental data for the hole drift velocity versus electric field and low-field hole mobility versus doping density.

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Title: 3-D Monte Carlo device simulator for variability modeling of p-MOSFETs
Authors: Vinicius V. A. Camargo
Alan C. J. Rossetto
Dragica Vasileska
Gilson I. Wirth
Publication date: 17-02-2020
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 2/2020
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-020-01461-1

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