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Journal of Materials Science: Materials in Electronics

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16-02-2017

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Authors: A. Boubaker, B. Hafsi, K. Lmimouni, A. Kalboussi

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2017

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Abstract

Pentacene and Polyera™ N2200 based-organic field effect transistors (OFETs), have been fabricated and simulated in a bottom-gate/back contacts configuration. The simulations were processed with the help of 2D drift–diffusion model. Comparison and analysis of the electrical characteristics of both n- and p-channel OFETs have been investigated. The study was centred on the electrical performance of every structure in term of mobility, fixed charge at the oxide/semiconductor interface and bulk traps density and its related energy. The dependence of the transfer characteristic on the grain boundaries traps state, in the case of pentacene, has been also outlined. Comparison between the simulation results and our experimental data show a good agreement. We finally present how our model can be applied to different devices with different channel length and we analyse their relationship with extracted electrical parameters.

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Title: A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models
Authors: A. Boubaker
B. Hafsi
K. Lmimouni
A. Kalboussi
Publication date: 16-02-2017
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 11/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-017-6480-y

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