A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation

A computational efficient nonlinear iterative method for computing the ground and excited state energies of an electron confined by an InAs quantum dot embedded in GaAs matrix is proposed. We treat the problem with the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and the Ben Daniel-Duke boundary conditions. Computational results show that the parabolic band approximation is valid only for the dots with large volume. For excited states the nonparabolic effect has also been found to be stronger than for ground states.