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Macroscopic Quantum Carrier Transport Modeling Read chapter Read first chapter

2001 | OriginalPaper | Chapter

The modeling of a SOI microelectromechanical sensor

Authors : C. Ravariu’, F. Ravariu, A. Rusu’, D. Dobrescu’, L. Dobrescu’

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

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The goal of this paper is to model a SOI pressure sensor based on piezoelectric effect. A PZT film deposited onto a SOI wafer acts like the transistor’s gate. The transducer element is an SOI-MOSFET. The electrical simulation made with ATLAS presents the static characteristics of the device. An analytical model for sensitivities was presented to offer a designing rule. Mechanical simulations with ANSYS establish some mechanical characteristics.

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Metadata
Title
The modeling of a SOI microelectromechanical sensor
Authors
C. Ravariu’
F. Ravariu
A. Rusu’
D. Dobrescu’
L. Dobrescu’
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_74