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Journal of Computational Electronics

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16-02-2018

Application of the generalized logistic functions in modeling inversion charge density of MOSFET

Authors: Tijana Kevkić, Vladica Stojanović, Dušan Joksimović

Published in: Journal of Computational Electronics | Issue 2/2018

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Abstract

The application of generalized logistic (GL) functions of the second type in fitting an important smoothing factor in a charge-based MOSFET model has been proposed. Beside the accurate results for the inversion charge density (ICD), this the GL-functional form of the smoothing factor enables also continuous and varied transitions of the ICD between weak and strong inversion region. Simulated values of the drain current, capacitance and transconductance match closely with numerical data for a wide range of substrate doping and oxide thickness.

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Title: Application of the generalized logistic functions in modeling inversion charge density of MOSFET
Authors: Tijana Kevkić
Vladica Stojanović
Dušan Joksimović
Publication date: 16-02-2018
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 2/2018
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-018-1137-5

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