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Basic Principles of Solid-State X-Ray Radiation Detector Operation Read chapter Read first chapter

2023 | OriginalPaper | Chapter

2. CdTe-/CdZnTe-Based Radiation Detectors

Authors : A. Opanasyuk, D. Kurbatov, Ya. Znamenshchykov, O. Diachenko, M. Ivashchenko

Published in: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Publisher: Springer International Publishing

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Abstract

The review is devoted to using bulk single crystals and thick films of cadmium telluride, as well as solid solutions based on it, as detector material. The main types of solid-state detectors of hard radiation and the criteria for choosing the optimal material for their creation are considered. It was found that to assess the ability of the detector material to accumulate and register radiation-induced charges, it makes sense to use three parameters: charge carrier mobility (μe,h), their lifetime (τ), and resistivity (ρ), giving preference to substances with a maximum value of these quantities. Grading of materials based on the effectiveness of detecting harsh radiation is carried out. It is shown that the most attractive materials, suitable for creating detectors with high radiation recording efficiency and good energy resolution, operating even at room temperature, are CdTe and some solid solutions based on it. The main physical characteristics of CdTe, ZnTe, Cd1 − xZnxTe (CZT) compounds and the features of their phase diagrams, which determine the possibility of their use as a detection material, are considered. The methods of growing bulk CdTe crystals, solid solutions based on them, and the peculiarities of obtained single crystals microstructure are briefly described. The characteristics of some detectors based on single crystals of cadmium telluride and CZT are given. It is shown that for many applications, instead of massive single crystals, thick films of these materials can be used. It can significantly reduce the cost of the detectors and solve some problems related to the inhomogeneity of the composition of the solid solution along the thickness of the ingot. The issues of using CdTe and CZT films in hard radiation detectors are considered, and examples of creating real devices based on them are given.

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previous chapter Basic Principles of Solid-State X-Ray Radiation Detector Operation
next chapter ZnS-Based Neutron and Alpha Radiation Detectors
Literature
1.
Abramov AI, Kazansky YA, Matusevich ES. Physical foundations of the operation of nuclear radiation detectors. Fundamentals of experimental methods of nuclear physics. Moscow: Atomizdat; 1977.
2.
Abyzov AS, Azhazha VM, Davydov LN, Kovtun GP, et al. Selection of semiconductor material for gamma radiation detectors. Technol Des Electron Equip. 2004;3:3–6.
3.
Armani N, Ferrari C, Salviati G, Bissoli F, Zha M, Zappettini A, Zanotti L. Defect-induced luminescence in high-resistivity high-purity undoped CdTe crystals. J Phys Condens Matter. 2002;14(48):13203.ADSCrossRef
4.
Aydinli A, Compaan A, Contreras-Puente G, Mason A. Polycrystalline Cd1−xZnxTe thin films on glass by pulsed laser deposition. Solid State Commun. 1991;80(7):465–8.ADSCrossRef
5.
Bassani F, Tatarenko S, Saminadayar K, Bleuse J, Magnea N, Pautrat JL. Luminescence characterisation of CdTe: in grown by molecular beam epitaxy. Appl Phys Lett. 1991;58(23):2651–3.ADSCrossRef
6.
Bavdaz M, Peacock A, Owens A. Future space applications of compound semiconductor X-ray detectors. Nucl Instrum Methods Phys Res, Sect A. 2001;458(1–2):123–31.ADSCrossRef
7.
Bell SJ, Baker MA, Duarte DD, Schneider A, Seller P, et al. Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe. Appl Surf Sci. 2018;427:1257–70.ADSCrossRef
8.
Berchenko N, Krevs V, Sredin V. Semiconductor solid solutions and their usage. Moscow: Voenizdat; 1982.
9.
10.
Bhargava R. Properties of wide bandgap II-VI semiconductors. London: INSPEC; 1997.
11.
Bolotnikov AE, Camarda GS, Cui Y, Yang G, Hossain A, Kim K, James RB. Characterisation and evaluation of extended defects in CZT crystals for gamma-ray detectors. J Cryst Growth. 2013;379:46–56.ADSCrossRef
12.
Bose DN, Bhunia S. High resistivity in-doped ZnTe: electrical and optical properties. Bull Mater Sci. 2005;28(7):647–50.CrossRef
13.
Brambilla A, Renet S, Jolliot M, Bravin E. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC. Nucl Instrum Methods Phys Res, Sect A. 2008;591(1):109–12.ADSCrossRef
14.
Brytan V. An influence of atomic hydrogen impurities on electrical and optical properties of CdTe and Cd1-xZnxTe single crystals grown by sublimation method (PhD dissertation, Odessa); 2014.
15.
Carcelén Valero V. Growth and characterization of Cd0.85Zn0.15 crystals doped with Bi: 1019 at/cm3 (PhD Thesis, Universidad Autónoma de Madrid, Madrid); 2010.
16.
Cross AS, Knauer JP, Mycielski A, Kochanowska D, Wiktowska-Baran M, et al. (Cd, Mn) Te detectors for characterisation of X-ray emissions generated during laser-driven fusion experiments. Nucl Instrum Methods Phys Res, Sect A. 2010;624(3):649–55.ADSCrossRef
17.
Del Sordo S, Abbene L, Caroli E, Mancini AM, Zappettini A, Ubertini P. Progress in the development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications. Sensors. 2009;9(5):3491–526.ADSCrossRef
18.
19.
Doty FP, Butler JF, Schetzina JF, Bowers KA. Properties of CdZnTe crystals grown by a high-pressure Bridgman method. J Vac Sci Technol B. 1992;10(4):1418–22.CrossRef
20.
Duff MC, Hunter DB, Burger A, Groza M, Buliga V, et al. Characterisation of heterogeneities in detector-grade CdZnTe crystals. J Mater Res. 2009;24(4):1361–7.ADSCrossRef
21.
Eisen Y, Shor A. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors. J Cryst Growth. 1998;184:1302–12.ADSCrossRef
22.
Feltgen T, Greenberg JH, Guskov AN, Fiederle M, Benz KW. P–T–X phase equilibrium studies in Zn–Te for crystal growth by the Markov method. Int J Inorg Mater. 2001;3(8):1241–4.CrossRef
23.
Fiederle M, Feltgen T, Meinhardt J, Rogalla M, Benz KW. State of the art of (Cd, Zn) Te as gamma detector. J Cryst Growth. 1999;197(3):635–40.ADSCrossRef
24.
Franc J, Höschl P, Belas E, Grill R, Hlıdek P, et al. CdTe and CdZnTe crystals for room temperature gamma-ray detectors. Nucl Instrum Methods Phys Res, Sect A. 1999;434(1):146–51.ADSCrossRef
25.
Georgobiani AN. Wide-band II-VI semiconductors and the prospects of their application. Soviet Phys Uspekhi. 1974;17(3):424.ADSCrossRef
26.
Gnatenko YP, Bukivskij PM, Piryatinski YP, Faryna IO, et al. The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd1-xHgxTe:V crystals. Funct Mater. 2008;15(1):23–9.
27.
Greenberg JH, Guskov VN. Vapor pressure scanning of non-stoichiometry in Cd0. 9Zn0. 1Te1±δ and Cd0. 85Zn0. 15Te1±δ. J Cryst Growth. 2006;289(2):552–8.ADSCrossRef
28.
Grinev BV, Ryzhikov VD, Seminozhenko VP. Scintillation detectors and radiation control systems based on them. Kyiv: Naukova dumka; 2007.
29.
Holloway PH, McGuire GE. Handbook of compound semiconductors: growth, processing, characterisation, and devices. Park Ridge; 1995.
30.
Kalinkin IP, Aleskovskij VB. Epitaxial films of A2B6 compounds. Leningrad: LGU Publishing; 1978.
31.
Kamae T. Developments in semiconductor detector technology and new applications—symposium summary. Nucl Instrum Methods Phys Res, Sect A. 1999;436(1–2):297–303.ADSCrossRef
32.
Kang J. Thin film CdTe as high energy x-ray detector material for medical applications (PhD thesis, University of Toledo); 2008.
33.
Kang S, Jung B, Noh S, Cho C, Yoon I, Park J. Feasibility study of direct-conversion x-ray detection using cadmium zinc telluride films. J Instrum. 2012;7(01):C01010.CrossRef
34.
Kasap S, Capper P. Springer handbook of electronic and photonic materials. Berlin: Springer; 2017.CrossRef
35.
Kikuma I, Furukoshi M. Formation of defects in zinc selenide crystals grown from the melt under argon pressure. J Cryst Growth. 1978;44(4):467–72.ADSCrossRef
36.
Kikuma I, Matsuo M, Komuro T. Growth and properties of ZnSe crystals by a modified Bridgman method. Jpn J Appl Phys. 1991;30(11R):2718.ADSCrossRef
37.
Kim TW, Park HL, Lee J. Structural and optical properties of a strained CdTeGaAs heterostructure grown by temperature-gradient vapor transport deposition at low temperature. Thin Solid Films. 1995;259(2):253–8.ADSCrossRef
38.
Kim K, Cho S, Seo J, Won J, Hong J, Kim S. Type conversion of polycrystalline CdZnTe thick films by multiple compensation. Nucl Instrum Methods Phys Res, Sect A. 2008;584(1):191–5.ADSCrossRef
39.
Kim K, Cho S, Suh J, Hong J, Kim S. Gamma-ray response of semi-insulating CdMnTe crystals. IEEE Trans Nucl Sci. 2009;56(3):858–62.ADSCrossRef
40.
Kolesnikov NN, Timonina AV. An universal technology of wide band gap II-VI compounds growth. Izvestija vyshshykh uchebnych zavedenij. Materialy elektronnoi tekhniki. 2010;2:24–8.
41.
Koohpayeh SM. Single crystal growth by the traveling solvent technique: a review. Prog Cryst Growth Charact Mater. 2016;62(4):22–34.CrossRef
42.
Korbutyak DV. Cadmium telluride: impurity-defect states and detecting properties. Kyiv: Ivan Fedorov; 2000.
43.
Kosyak V, Opanasyuk A, Bukivskij PM, Gnatenko YP. Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation. J Cryst Growth. 2010;312(10):1726–30.ADSCrossRef
44.
Kozlova OG. Growth and morphology of crystals. Moscow: Moscow State University Publishing; 1980.
45.
Kreger F, et al. Chemistry of non-ideality crystals. Moskow: Mir; 1969.
46.
Krustok J, Collan H, Hjelt K, Mädasson J, Valdna V. Photoluminescence from deep acceptor-deep donor complexes in CdTe. J Lumin. 1997;72:103–5.CrossRef
47.
Kulchitskij NA, Naumov AV. The modern state of CdTe, ZnTe and Cd1-xZnxTe fabrication. Izvestija vyshshykh uchebnych zavedenij. Materialy elektronnoi tekhniki. 2010;2:17–24.
48.
Kutniy DV, Prokhorets IM, Rybka AV, Nakonechny DV, et al. Technique for measuring electro-magnetic radiation by semiconductor detectors. Questions of atomic science and technology; 2006.
49.
Kwon JS, Shin DY, Choi IS, Kim HS, Kim KH, et al. Growth of polycrystalline Cd0.8Zn0.2Te thick films for X-Ray detectors. Phys Status Solidi B. 2002;229(2):1097–101.ADSCrossRef
50.
Lee HS, Lee KH, Kim JS, Park HL, Kim TW. Rapid thermal annealing effects on the optical properties in strained CdTe (100)/GaAs (100) heterostructures. J Mater Sci. 2004;39(23):7115–7.ADSCrossRef
51.
Lowe BG, Sareen RA. Semiconductor X-ray detectors. Boca Raton: CRC Press; 2014.
52.
Lund JC, Olsen R, Van Scyoc JM, James RB. The use of pulse processing techniques to improve the performance of Cd1-xZnxTe gamma-ray spectrometers. IEEE Nucl Sci Symp Med Imag Conf Rec. 1995;1:126–30.
53.
Mycielski A, Kowalczyk L, Gałązka RR, Sobolewski R, Wang D, Burger A, et al. Applications of II–VI semimagnetic semiconductors. J Alloys Compd. 2006;423(1–2):163–8.CrossRef
54.
Niraula M, Yasuda K, Uchida K, Nakanishi Y, Mabuchi T, Agata Y. MOVPE growth of thick CdTe heteroepitaxial layers for X-ray imaging detectors. Phys Status Solidi C. 2004;1(4):1075–8.ADSCrossRef
55.
Niraula M, Yasuda K, Takagi K, Kusama H, Tominaga M, Yamamoto Y, Suzuki K. Development of nuclear radiation detectors based on epitaxially grown thick CdTe layers on n+-GaAs substrates. J Electron Mater. 2005;34(6):815–9.ADSCrossRef
56.
Nishizawa H, Ikegami K, Takashima K, Usami T, Hayakawa T, Yamamoto T. Development of multi-layered CdTe semiconductor detectors. Hoshasen. 1996;22(3):27–36.
57.
Novoselova AV, Lazarev VB. Physical and chemical properties of semiconductor substances: a reference. Moscow: Nauka; 1979.
58.
Owens A, Peacock A. Compound semiconductor radiation detectors. Nucl Instrum Methods Phys Res, Sect A. 2004;531(1–2):18–37.ADSCrossRef
59.
Owens A, Buslaps T, Gostilo V, Graafsma H, Hijmering R, Kozorezov A, et al. Hard X-and γ-ray measurements with a large volume coplanar grid CdZnTe detector. Nucl Instrum Methods Phys Res, Sect A. 2006;563(1):242–8.ADSCrossRef
60.
Park SJ, Kim KH, Park YJ, Yuk SW, et al. X-ray response of Polycrystalline-CdZnTe. IEEE Symp Conf Rec Nucl Sci. 2004;7:4428–32.
61.
Parsai EI, Shvydka D, Kang J. Design and optimisation of large area thin-film CdTe detector for radiation therapy imaging applications. Med Phys. 2010;37(8):3980–94.CrossRef
62.
Raiskin E, Butler JF. CdTe low level gamma detectors based on a new crystal growth method. IEEE Trans Nucl Sci. 1988;35(1):81–4.ADSCrossRef
63.
Reno JL, Jones ED. Determination of the dependence of the band-gap energy on composition for Cd1−xZnxTe. Phys Rev B. 1992;45(3):1440.ADSCrossRef
64.
Rodríguez ME, Alvarado-Gil JJ, Delgadillo I, Zelaya O, et al. On the thermal and structural properties of Cd1−xZnxTe in the range 0<×<0.3. Phys Status Solidi A. 1996;158(1):67–72.ADSCrossRef
65.
Rohatgi A, et al. High efficiency cadmium and zinc telluride-based thin film solar cells, Final Subcontract Report DE91002112; 1990.
66.
Romeo A. Growth and characterisation of high efficiency CdTe/CdS solar cells (Doctoral dissertation, ETH Zurich); 2002.
67.
Rossa E, Bovet C, Meier D, Schmickler H, Verger L, et al. CdTe photoconductors for LHC luminosity monitoring. Nucl Instrum Methods Phys Res, Sect A. 2002;480(2–3):488–93.ADSCrossRef
68.
Roy UN, Weiler S, Stein J, Cui Y, Groza M, Buliga V, Burger A. Zinc mapping in THM grown detector grade CZT. J Cryst Growth. 2012;347(1):53–5.ADSCrossRef
69.
Roy U, Camarda G, Cui Y, Gul R, Hossain A, Yang G. Cadmium zinc telluride selenide (CdZnTeSe) a promising low cost alternative to cadmium zinc telluride (CdZnTe) for medical imaging and nuclear detector applications. New York: Brookhaven National Lab; 2017.CrossRef
70.
Roy UN, Camarda GS, Cui Y, Gul R, Yang G, Zazvorka J, et al. Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects. Sci Rep. 2019;9(1):1–7.CrossRef
71.
Rudolph P. Fundamental studies on Bridgman growth of CdTe. Prog Cryst Growth Charact Mater. 1994;29(1–4):275–381.CrossRef
72.
Rudolph P. Prosperity and difficulty of bulk crystal growth of semiconductor compound (a review). Funct Mater. 2007;14(4):411–25.
73.
Rudolph P, Engel A, Schentke I, Grochocki A. Distribution and genesis of inclusions in CdTe and (Cd, Zn) Te single crystals grown by the Bridgman method and by the travelling heater method. J Cryst Growth. 1995;147(3–4):297–304.ADSCrossRef
74.
Sakr GB, Yahia IS. Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications. J Alloys Compd. 2010;503(1):213–9.CrossRef
75.
Schenk M, Hähnert I, Duong LTH, Niebsch HH. Validity of the lattice-parameter Vegard-rule in Cd1-xZnxTe Solid Solutions. Cryst Res Technol. 1996;31(5):665–72.CrossRef
76.
Schlesinger TE. Semiconductors for room temperature nuclear detector applications. San Diego: Academic Press Inc; 1995.
77.
Sellin PJ. Thick film compound semiconductors for X-ray imaging applications. Nucl Instrum Methods Phys Res, Sect A. 2006;563(1):1–8.ADSCrossRef
78.
Sen S, Johnson SM, Kiele JA, Konkel WH, Stannard JE. Growth of large-diameter CdZnTe and CdTeSe boules for Hg1−xCdxTe epitaxy: status and prospects. MRS Online Proceedings Library (OPL). 1989;161.
79.
Sharma BL. Semiconductor heterojunctions. Moscow: Soviet Radio; 1979.
80.
Shim M, Kim YM, Lee HH, Hong SJ, Lee JH. Separation behavior of impurities and selenium reduction by the reactive zone refining process using high-frequency induction heating to purify Te. J Cryst Growth. 2016;455:6–12.ADSCrossRef
81.
Simashkevich AV. Heterojunctions based on AII BVI semiconductor compounds; 1980.
82.
Singh HP, Dayal B. Lattice parameters and thermal expansion of zinc telluride and mercury selenide. Acta Crystallogr Sect A: Cryst Phys, Diffr, Theor Gen Crystallogr. 1970;26(3):363–4.ADSCrossRef
83.
Stolyarova S, Edelman F, Chack A, Berner A, Werner P, et al. Structure of CdZnTe films on glass. J Phys D Appl Phys. 2008;41(6):065402.ADSCrossRef
84.
Strzałkowski K. The composition effect on the thermal and optical properties across CdZnTe crystals. J Phys D Appl Phys. 2016;49(43):435106–12.ADSCrossRef
85.
Takahashi T, Watanabe S. Recent progress in CdTe and CdZnTe detectors. IEEE Trans Nucl Sci. 2001;48(4):950–9.ADSCrossRef
86.
Takahashi J, Mochizuki K, Hitomi K, Shoji T. Growth of Cd1−xZnxTe (x∼0.04) films by hot-wall method and its evaluation. J Cryst Growth. 2004;269(2–4):419–24.ADSCrossRef
87.
Thomas RN, Hobgood HM, Ravishankar PS, Braggins TT. Melt growth of large diameter semiconductors. Solid State Technol. 1990;33(5):121–8.
88.
Tirado-Mejía L, Marín-Hurtado JI, Ariza-Calderón H. Influence of disorder effects on Cd1–xZnxTe optical properties. Phys Status Solidi B. 2000;220(1):255–60.ADSCrossRef
89.
Tobeñas S, Larramendi EM, Purón E, De Melo O, Cruz-Gandarilla F, et al. Growth of Cd1−xZnxTe epitaxial layers by isothermal closed space sublimation. J Cryst Growth. 2002;234(2–3):311–7.ADSCrossRef
90.
Tokuda S, Kishihara H, Adachi S, Sato T. Improvement of the temporal response and output uniformity of polycrystalline CdZnTe films for high-sensitivity X-ray imaging. In: Medical Imaging 2003: Physics of Medical Imaging, Vol. 5030; 2003, pp. 861–870.
91.
Tokuda S, Kishihara H, Adachi S, Sato T. Preparation and characterisation of polycrystalline CdZnTe films for large-area, high-sensitivity X-ray detectors. J Mater Sci Mater Electron. 2004;15(1):1–8.CrossRef
92.
Toney JE, Schlesinger TE, James RB. Modeling and simulation of uniformity effects in Cd1-xZnxTe gamma-ray spectrometers. IEEE Trans Nucl Sci. 1998;45(1):105–13.ADSCrossRef
93.
Triboulet R, Marfaing Y. Growth of high purity CdTe single crystals by vertical zone melting. J Electrochem Soc. 1973;120(9):1260.CrossRef
94.
Triboulet R, Siffert P. CdTe and related compounds; physics, defects, hetero-and Nano-structures, crystal growth, surfaces and applications: physics, CdTe-based nanostructures, CdTe-based Semimagnetic Semiconductors, defects. Elsevier; 2009.
95.
Trivedi SB, Wang CC, Kutcher S, Hommerich U, Palosz W. Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications. J Cryst Growth. 2008;310(6):1099–106.ADSCrossRef
96.
Turkevych I. High temperature properties of CdTe (Doctoral dissertation, Prague); 2004, 188 p.
97.
Verger L, Baffert N, Rosaz M, Rustique J. Characterisation of CdZnTe and CdTe: Cl materials and their relationship to X-and γ-ray detector performance. Nucl Instrum Methods Phys Res, Sect A. 1996;380(1–2):121–6.ADSCrossRef
98.
Won JH, Kim KH, Suh JH, Cho SH, Cho PK, et al. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films. Nucl Instrum Methods Phys Res, Sect A. 2008;591(1):206–8.ADSCrossRef
99.
Wu X. High-efficiency polycrystalline CdTe thin-film solar cells. Sol Energy. 2004;77(6):803–14.ADSCrossRef
100.
Xu H, Xu R, Huang J, Zhang J, Tang K, Wang L. The dependence of Zn content on thermal treatments for Cd1−xZnxTe thin films deposited by close-spaced sublimation. Appl Surf Sci. 2014;305:477–80.ADSCrossRef
101.
Yang G, Bolotnikov AE, Camarda GS, Cui Y, Hossain A, Yao HW, James RB. Internal electric field investigations of a cadmium zinc telluride detector using synchrotron x-ray mapping and Pockels effect measurements. J Electron Mater. 2009;38(8):1563–7.ADSCrossRef
102.
Yazdi S, Alinejad M, Tajabor N. Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method. Iran J Phys Res. 2006;6(1):1–5.
103.
Zaiour A, Ayoub M, Hamié A, Fawaz A, Hage-ali M. Preparation of high purity CdTe for nuclear detector: electrical and nuclear characterisation. Phys Procedia. 2014;55:476–84.ADSCrossRef
104.
Zanio K. Semiconductors and semimetals. New York: Academic Press; 1978.
105.
Zaveriukhin BN, et al. Film detectors of nuclear irradiation based on cadmium telluride. Tech Phys Lett. 2003;29(22):80–7.
106.
Zhang N, Yeckel A, Burger A, Cui Y, Lynn KG, Derby JJ. Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride. J Cryst Growth. 2011;325(1):10–9.ADSCrossRef
107.
Zhou H, Zeng D, Pan S. Effect of Al-induced crystallisation on CdZnTe thin films deposited by radio frequency magnetron sputtering. Nucl Instrum Methods Phys Res, Sect A. 2013;698:81–3.ADSCrossRef
Metadata
Title
CdTe-/CdZnTe-Based Radiation Detectors
Authors
A. Opanasyuk
D. Kurbatov
Ya. Znamenshchykov
O. Diachenko
M. Ivashchenko
Copyright Year
2023
Book
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Print ISBN: 978-3-031-23999-1

Electronic ISBN: 978-3-031-24000-3

Copyright Year: 2023

DOI
https://doi.org/10.1007/978-3-031-24000-3_2

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