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26-12-2019

Characterization and performance of graphene–PbSe thin film heterojunction

Authors: Bo He, Yi-Xuan Ren, Tian-Jun Dai, Shuang Hou, Xing-Zhao Liu

Published in: Rare Metals | Issue 1/2021

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Abstract

An infrared detector with high responsivity based on graphene–PbSe thin film heterojunction was reported. High-quality PbSe thin film and graphene were prepared by molecular beam epitaxy and chemical vapor deposition, respectively. The physical characteristics of PbSe thin film and graphene were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman measurement. The phototransistor using PbSe thin film as a sensitizer and graphene as a channel to transport excitons exhibits peak responsivity and detectivity up to ~ 420 A·W⁻¹ and 5.9 × 10¹¹ Jones (radiation intensity: 0.75 mW·cm⁻²) at room temperature in the near-infrared (NIR) region, respectively. The high optical response is attributed to the photo-excited holes transferring from PbSe film to graphene under irradiation. Moreover, it is revealed that the responsivity of graphene–PbSe phototransistor is gate-tunable which is important in photodetectors.

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Title: Characterization and performance of graphene–PbSe thin film heterojunction
Authors: Bo He
Yi-Xuan Ren
Tian-Jun Dai
Shuang Hou
Xing-Zhao Liu
Publication date: 26-12-2019
Publisher: Nonferrous Metals Society of China
Published in: Rare Metals / Issue 1/2021
Print ISSN: 1001-0521
Electronic ISSN: 1867-7185
DOI: https://doi.org/10.1007/s12598-019-01344-w

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