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The Atomic Force Microscopy for Nanoelectronics Read chapter Read first chapter

2019 | OriginalPaper | Chapter

10. Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics

Authors : Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Chandreswar Mahata, Mario Lanza

Published in: Electrical Atomic Force Microscopy for Nanoelectronics

Publisher: Springer International Publishing

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Abstract

Two-dimensional materials (2DM), such as the semimetal graphene, semiconducting MoS2 and insulating h-BN, are currently the object of wide interests for next generation electronic applications. Despite recent progresses in large area synthesis of 2DMs, their electronic properties are still affected by nano- or micro-scale defects/inhomogeneities related to the specific growth process. Electrical scanning probe methods, such as conductive atomic force microscopy (C-AFM), are essential tools to investigate charge transport phenomena in 2DMs with nanoscale resolution. This chapter illustrates some case studies of C-AFM applications to graphene, MoS2 and h-BN. Furthermore, the results of the nanoscale electrical characterization have been correlated to the behavior of macroscopic devices fabricated on these materials.

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Metadata
Title
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Authors
Filippo Giannazzo
Giuseppe Greco
Fabrizio Roccaforte
Chandreswar Mahata
Mario Lanza
Copyright Year
2019
Book
Electrical Atomic Force Microscopy for Nanoelectronics

Print ISBN: 978-3-030-15611-4

Electronic ISBN: 978-3-030-15612-1

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-3-030-15612-1_10