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Semiconductors
Published in: Semiconductors 2/1998

01-02-1998 | Semiconductor Structures, Interfaces and Surfaces

Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

Authors: B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, V. V. Ryl’kov

Published in: Semiconductors | Issue 2/1998

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previous article Transient current in amorphous, porous semiconductor-crystalline semiconductor structures
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Metadata
Title
Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse
Authors
B. A. Aronzon
D. Yu. Kovalev
A. M. Kozlov
J. Leotin
V. V. Ryl’kov
Publication date
01-02-1998
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 2/1998
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1187339

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