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Semiconductors
Published in: Semiconductors 2/1998

01-02-1998 | Semiconductor Structures, Interfaces and Surfaces

Transient current in amorphous, porous semiconductor-crystalline semiconductor structures

Authors: L. P. Kazakova, E. A. Lebedev

Published in: Semiconductors | Issue 2/1998

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previous article Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers
next article Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

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Metadata
Title
Transient current in amorphous, porous semiconductor-crystalline semiconductor structures
Authors
L. P. Kazakova
E. A. Lebedev
Publication date
01-02-1998
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 2/1998
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1187557

Other articles of this Issue 2/1998

Semiconductors 2/1998 Go to the issue

Amorphous, Glassy, and Porous Semiconductors

InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)

Low-Dimensional Systems

Lateral traveling wave as a type of transient process in a resonant-tunneling structure

Semiconductor Structures, Interfaces and Surfaces

Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

Semiconductor Structures, Interfaces and Surfaces

Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers

Electronic and Optical Properties of Semiconductors

Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices

Semiconductor Structures, Interfaces and Surfaces

Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes

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