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Semiconductors
Published in: Semiconductors 2/1998

01-02-1998 | Electronic and Optical Properties of Semiconductors

Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices

Authors: A. S. Ablitsova, V. F. Agekyan, A. Yu. Serov

Published in: Semiconductors | Issue 2/1998

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previous article Deformation potentials of the Γ(000) band extrema in CdGa2S4
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Metadata
Title
Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices
Authors
A. S. Ablitsova
V. F. Agekyan
A. Yu. Serov
Publication date
01-02-1998
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 2/1998
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1187333

Other articles of this Issue 2/1998

Semiconductors 2/1998 Go to the issue

Semiconductor Structures, Interfaces and Surfaces

Transient current in amorphous, porous semiconductor-crystalline semiconductor structures

Low-Dimensional Systems

Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors

Amorphous, Glassy, and Porous Semiconductors

The structure of porous gallium phosphide

Electronic and Optical Properties of Semiconductors

Excited states of chalcogen ions in germanium

Electronic and Optical Properties of Semiconductors

Exciton characteristics of intercalated TlGaSe2 single crystal

Atomic Structure and Non-Electronic Properties of Semiconductors

Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation

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