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Optical and Quantum Electronics

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01-11-2018

Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors

Authors: Xiaodong Wang, Yulu Chen, Xiaoyao Chen, Bingbing Wang, Chuansheng Zhang, Haoxing Zhang, Ming Pan

Published in: Optical and Quantum Electronics | Issue 11/2018

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Abstract

Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors has been investigated. Device structure, numerical models and simulation techniques are described in detail. By careful model and parameter calibration, the numerical simulation is completely consistent with the analytical calculation, proving the validity of simulation methods. Our results reveals that the carrier-transport modes of GaAs-based BIB detectors can be classified into two categories (i.e., electron current and hopping current), and the hopping current can be neglected compared with the electron current. Besides, it is demonstrated that the dark current of GaAs-based BIB detector is dominated by the drift–diffusion current and the generation-recombination current, and the both current components are monotonically decreasing functions of the acceptor concentration.

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Title: Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors
Authors: Xiaodong Wang
Yulu Chen
Xiaoyao Chen
Bingbing Wang
Chuansheng Zhang
Haoxing Zhang
Ming Pan
Publication date: 01-11-2018
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 11/2018
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-017-1258-2

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