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Journal of Computational Electronics

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02-07-2021

Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand

Authors: Kevin Dannecker, Jens Baringhaus

Published in: Journal of Computational Electronics | Issue 5/2021

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Abstract

In this work, we compare various field shielding methods for gallium nitride trench metal-oxide-semiconductor field effect transistors (trench MOSFETs) and provide insight into the trade-off between blocking capability and on-state performance. We evaluated the ideal doping implantation- and geometry parameters by means of two-dimensional technology computer-aided design (TCAD) simulation for field plate and p-region-based shielding structures. Real application demands were considered to define the required safe-operating area of the devices. We found the optimal shielding structure to be a deep p-implantation next to the gate trench. By adding an additional trench in the implantation area prior to the implantation itself, a deep shielding structure was achieved while keeping the implantation energy as low as 1.5 MeV. The simulation with the optimized shielding structure showed a maximum operating voltage of \({V_{\text {DSmax}}=1.5\,{\text {kV}}}\) and a specific on-resistance of 2 m\({\Omega }\,\)cm\(^2\). The negative impact of the p-implantation-based shielding regarding on-state performance was compensated by introducing a higher n-doped current spreading layer between p-channel region and drift layer.

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Title: Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand
Authors: Kevin Dannecker
Jens Baringhaus
Publication date: 02-07-2021
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 5/2021
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-021-01736-1

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