Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Electronic Materials
Published in: Journal of Electronic Materials 11/2020

01-07-2020 | International Electron Devices and Materials Symposium 2019

Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source

Authors: Chih-Wei Chen, Wei-Chen Ho, Yue-Ming Hsin, Jerry Tzou, Wen-Hsien Huang, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Wen-Ta Hsu, Sze-Ching Liu

Published in: Journal of Electronic Materials | Issue 11/2020

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …
previous article Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments
next article Reduction of Contact Resistivity by Nano-Textured Contact

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Metadata
Title
Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source
Authors
Chih-Wei Chen
Wei-Chen Ho
Yue-Ming Hsin
Jerry Tzou
Wen-Hsien Huang
Chang-Hong Shen
Jia-Ming Shieh
Wen-Kuan Yeh
Wen-Ta Hsu
Sze-Ching Liu
Publication date
01-07-2020
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 11/2020
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-020-08292-7

Other articles of this Issue 11/2020

Journal of Electronic Materials 11/2020 Go to the issue

Topical Collection: U.S. Workshop on Physics and Chemistry of II-VI Materials 2019

RTS Noise Detection and Voltage Effect on RTS in HgCdTe Focal-Plane Arrays

OriginalPaper

The Obstruction Effect of Ni Layer on the Interdiffusion of Cu Substrate and Sn Solder: A Theoretical Investigation

OriginalPaper

Enhancing the Photovoltaic Performance of Solid-State Dye-Sensitized Solar Cells with Composite Materials and Luminescent Down-Shifting

Topical Collection: U.S. Workshop on Physics and Chemistry of II-VI Materials 2019

Performance Limits of III–V Barrier Detectors

Topical Collection: U.S. Workshop on Physics and Chemistry of II-VI Materials 2019

Space Application Requirement Breakdown and Sensor Concept Implementation for MCT-Based LWIR and VLWIR 2D High-Performance Focal Plane Detector Arrays at AIM

OriginalPaper

Effect of Hybridization on the Functional Properties of AgMF–MWCNT-Filled Electrically Conductive Adhesive