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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 20/2018

18-08-2018

Dielectric relaxation and relevant mechanism in giant dielectric constant Sm2/3Cu3Ti4O12 ceramics

Authors: Lei Ni, Maosen Fu, Yan Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 20/2018

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Abstract

Sm2/3Cu3Ti4O12 ceramics with giant dielectric constant were successfully prepared by the traditional solid-state sintering process. The dielectric characteristics and relevant mechanism were systematically investigated. The dielectric constants of Sm2/3Cu3Ti4O12 ceramics can reach to 104 at 298 K and 1 kHz, and also exhibited two distinct thermal-activated dielectric relaxations in different temperature ranges. The dielectric relaxation at low temperatures was regarded as the effect of the polyvalence structures (Cu2+/Cu3+ and Ti3+/Ti4+) in grains due to the oxygen compensation during the sintering process, while the dielectric relaxation at high temperatures was induced by the grain boundary effects. The giant dielectric response in Sm2/3Cu3Ti4O12 ceramics can be associated with the heterogeneous structure and combined effect of the grain and grain boundary.
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Metadata
Title
Dielectric relaxation and relevant mechanism in giant dielectric constant Sm2/3Cu3Ti4O12 ceramics
Authors
Lei Ni
Maosen Fu
Yan Zhang
Publication date
18-08-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 20/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9880-8

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