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Macroscopic Quantum Carrier Transport Modeling Read chapter Read first chapter

2001 | OriginalPaper | Chapter

Differences Between Quantum-Mechanical Capacitance-Voltage Simulators

Authors : C. A. Richterz, E. M. Vogel, A. M. Hodge, A. R. Hefner

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

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We present an extensive benchmarking comparison of an ensemble of the most advanced quantum-mechanical (QM) capacitance-voltage (CV) simulators available. Quantitative differences in the accumulation capacitance of p-channel and n-channel devices as large as 20% are found in a systematic comparison. Some of the underlying physics and models that lead to the observed differences are described.

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Metadata
Title
Differences Between Quantum-Mechanical Capacitance-Voltage Simulators
Authors
C. A. Richterz
E. M. Vogel
A. M. Hodge
A. R. Hefner
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_77