Top

Journal of Materials Science

Published in:

03-03-2022 | Electronic materials

Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration

Authors: Khalid Quertite, Jianbao Gao, Marion Descoins, Maxime Bertoglio, Christophe Girardeaux, Dominique Mangelinck

Published in: Journal of Materials Science | Issue 10/2022

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

The effect of Co, Pd and Pt ultrathin films on the kinetics of the formation of Ni-silicide by reactive diffusion is investigated. 50 nm Ni/1 nm X/ 50 nm Ni (X = Co, Pd, Pt) deposited on Si(100) substrates are studied using in-situ and ex-situ measurements by X-ray diffraction (XRD). The presence of Co, Pd or Pt thin films in between the Ni layers delays the formation of the metal rich phase compared to the pure Ni/Si system and thus these films act as diffusion barriers. A simultaneous silicide formation (δ-Ni₂Si and NiSi phases) different from the classic sequential formation is found during the consumption of the top Ni layer for which Ni has to diffuse through the barrier. A model for the simultaneous growth in the presence of a barrier is developed, and simulation of the kinetics measured by XRD is used to determine the permeability of the different barriers. Atom probe tomography (APT) of the Ni/Pd/Ni system shows that the Pd layer is located between the Ni top layer and δ-Ni₂Si during the silicide growth, in accordance with a silicide formation controlled by Ni diffusion through the Pd layer. The effect of the barrier on the silicide formation and properties is discussed.

previous article Enhanced room-temperature magnetoresistance of hybrid graphene nanosheets produced by a laser-assisted process

next article Suitability of thin-GaN for AlGaN/GaN HEMT material and device

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Lavoie C, d’Heurle FM, Detavernier C, Cabral C Jr (2003) Towards implementation of a nickel silicide process for CMOS technologies. Microelectron Eng 70:144–157. https://doi.org/10.1016/S0167-9317(03)00380-0CrossRef

Deng F, Johnson RA, Asbeck PM, Lau SS, Dubbelday WB, Hsiao T, Woo J (1997) Salicidation process using NiSi and its device application. J Appl Phys 81:8047–8051. https://doi.org/10.1063/1.365410CrossRef

Iwai H, Ohguro T, Ohmi S (2002) NiSi salicide technology for scaled CMOS. Microelectron Eng 60:157–169. https://doi.org/10.1016/S0167-9317(01)00684-0CrossRef

Kittl JA, Lauwers A, Chamirian O, Van Dal M, Akheyar A, De Potter M, Lindsay R, Maex K (2003) Ni- and Co-based silicides for advanced CMOS applications. Microelectron Eng 70:158–165. https://doi.org/10.1016/S0167-9317(03)00370-8CrossRef

Mangelinck D, Dai JY, Pan JS, Lahiri SK (1999) Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition. Appl Phys Lett 75:1736–1738. https://doi.org/10.1063/1.124803CrossRef

Mangelinck D, Dai JY, Lahiri SK, Ho CS, Osipowicz T (1999) Formation and stability of NI(PT) silicide on (100)SI and (111)SI, MRS Proceedings. 564. https://doi.org/10.1557/PROC-564-163

Lavoie C, Detavernier C, Cabral C, d’Heurle FM, Kellock AJ, Jordan-Sweet J, Harper JME (2006) Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films. Microelectron Eng 83:2042–2054. https://doi.org/10.1016/j.mee.2006.09.006CrossRef

Huang W, Zhang L, Gao Y, Jin H (2007) Effect of a thin W, Pt, Mo, and Zr interlayer on the thermal stability and electrical characteristics of NiSi. Microelectron Eng 84:678–683. https://doi.org/10.1016/j.mee.2006.11.006CrossRef

Wang RN, Feng JY (2003) Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems. J Phys Condens Matter. https://doi.org/10.1088/0953-8984/15/12/310CrossRef

10.

Demeulemeester J, Knaepen W, Smeets D, Schrauwen A, Comrie CM, Barradas NP, Vieira A, Detavernier C, Temst K, Vantomme A (2012) In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100). J Appl Phys 111:043511. https://doi.org/10.1063/1.3681331CrossRef

11.

El Kousseifi M, Hoummada K, Bertoglio M, Mangelinck D (2016) Selection of the first Ni silicide phase by controlling the Pt incorporation in the intermixed layer. Acta Mater 106:193–198. https://doi.org/10.1016/j.actamat.2016.01.004CrossRef

12.

Chu WK, Lau SS, Mayer JW, Müller H, Tu KN (1975) Implanted noble gas atoms as diffusion markers in silicide formation. Thin Solid Films 25:393–402. https://doi.org/10.1016/0040-6090(75)90057-7CrossRef

13.

Nemouchi F, Mangelinck D, Bergman C, Gas P, Smith U (2005) Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate. Appl Phys Lett 86:041903. https://doi.org/10.1063/1.1852727CrossRef

14.

d’Heurle FM, Gas P (1986) Kinetics of formation of silicides: a review. J Mater Res 1:205–221. https://doi.org/10.1557/JMR.1986.0205CrossRef

15.

Mangelinck D (2014) Chapter 9 - The Growth of Silicides and Germanides, in: A. Paul, S. Divinski (Eds.), Handbook of Solid State Diffusion, Volume 2, Elsevier, pp. 379–446. https://doi.org/10.1016/B978-0-12-804548-0.00009-8.

16.

Gaudet S, Coia C, Desjardins P, Lavoie C (2010) Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance. J Appl Phys 107:093515. https://doi.org/10.1063/1.3327451CrossRef

17.

Deal BE, Grove AS (1965) General relationship for the thermal oxidation of silicon. J Appl Phys 36:3770–3778. https://doi.org/10.1063/1.1713945CrossRef

18.

Putero M, Ehouarne L, Ziegler E, Mangelinck D (2010) First silicide formed by reaction of Ni(13%Pt) films with Si(1 0 0): nature and kinetics by in-situ X-ray reflectivity and diffraction. Scripta Mater 63:24–27. https://doi.org/10.1016/j.scriptamat.2010.02.040CrossRef

19.

Panciera F, Mangelinck D, Hoummada K, Texier M, Bertoglio M, De Luca A, Gregoire M, Juhel M (2014) Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at% Pt) film with Si(1 0 0) substrate. Scripta Materialia. 78–79:9–12. https://doi.org/10.1016/j.scriptamat.2014.01.010CrossRef

20.

Schrauwen A, Demeulemeester J, Deduytsche D, Devulder W, Detavernier C, Comrie CM, Temst K, Vantomme A (2017) Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): nucleation and solid solubility of the monosilicides. Acta Mater 130:19–27. https://doi.org/10.1016/j.actamat.2017.03.022CrossRef

21.

Mangelinck D, Luo T, Girardeaux C (2018) Reactive diffusion in the presence of a diffusion barrier: experiment and model. J Appl Phys 123:185301. https://doi.org/10.1063/1.5023578CrossRef

22.

Zschiesche H, Alfonso C, Charaï A, Mangelinck D (2021) Effect of a Ti diffusion barrier on the cobalt silicide formation: solid solution, segregation and reactive diffusion. Acta Mater 204:116504. https://doi.org/10.1016/j.actamat.2020.116504CrossRef

23.

Mangelinck D, Panciera F, Hoummada K, El Kousseifi M, Perrin C, Descoins M, Portavoce A (2014) Atom probe tomography for advanced metallization. Microelectron Eng 120:19–33. https://doi.org/10.1016/j.mee.2013.12.018CrossRef

24.

Bas P, Bostel A, Deconihout B, Blavette D (1995) A general protocol for the reconstruction of 3D atom probe data. Appl Surf Sci 87–88:298–304. https://doi.org/10.1016/0169-4332(94)00561-3CrossRef

25.

Mangelinck D, Hoummada K (2008) Effect of stress on the transformation of Ni2Si into NiSi. Appl Phys Lett 92:254101. https://doi.org/10.1063/1.2949751CrossRef

26.

Putero M, Mangelinck D (2012) Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature. Appl Phys Lett 101:111910. https://doi.org/10.1063/1.4752716CrossRef

27.

Krakauer BW, Seidman DN (1993) Absolute atomic-scale measurements of the Gibbsian interfacial excess of solute at internal interfaces. Phys Rev B 48:6724–6727. https://doi.org/10.1103/PhysRevB.48.6724CrossRef

28.

Zschiesche H, Charaï A, Mangelinck D, Alfonso C (2019) Ti segregation at CoSi2 grain boundaries. Microelectron Eng 203–204:1–5. https://doi.org/10.1016/j.mee.2018.10.009CrossRef

29.

Zschiesche H, Charai A, Alfonso C, Mangelinck D (2020) Methods for Gibbs triple junction excess determination: Ti segregation in CoSi2 thin film. J Mater Sci. https://doi.org/10.1007/s10853-020-04856-4CrossRef

30.

Mangelinck D, Gas P, Grob A, Pichaud B, Thomas O (1996) Formation of Ni silicide from Ni(Au) films on (111)Si. J Appl Phys 79:4078–4086. https://doi.org/10.1063/1.361770CrossRef

31.

Hoummada K, Perrin-Pellegrino C, Mangelinck D (2009) Effect of Pt addition on Ni silicide formation at low temperature: growth, redistribution, and solubility. J Appl Phys 106:063511. https://doi.org/10.1063/1.3204948CrossRef

32.

Luo T, Mangelinck D, Descoins M, Bertoglio M, Mouaici N, Hallén A, Girardeaux C (2018) Combined effect of Pt and W alloying elements on Ni-silicide formation. J Appl Phys 123:125301. https://doi.org/10.1063/1.5020435CrossRef

33.

Olowolafe JO, Nicolet M-A, Mayer JW (1976) Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films. Thin Solid Films 38:143–150. https://doi.org/10.1016/0040-6090(76)90221-2CrossRef

34.

Gas P, D’Heurle FM (1998) Diffusion in Silicide, in: Diffusion in Semiconductors and Non-Metallic Solids, Ed. D.L. Beke, Springer Verlag, Berlin

35.

d’Heurle F, Petersson CS, Baglin JEE, La Placa SJ, Wong CY (1984) Formation of thin films of NiSi: metastable structure, diffusion mechanisms in intermetallic compounds. J Appl Phys 55:4208. https://doi.org/10.1063/1.333021CrossRef

36.

De Keyser K, Van Bockstael C, Van Meirhaeghe RL, Detavernier C, Verleysen E, Bender H, Vandervorst W, Jordan-Sweet J, Lavoie C (2010) Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). Appl Phys Lett 96:173503. https://doi.org/10.1063/1.3384997CrossRef

37.

El Kousseifi M, Hoummada K, Epicier T, Mangelinck D (2015) Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface. Acta Mater 99:1–6. https://doi.org/10.1016/j.actamat.2015.07.062CrossRef

38.

Cojocaru-Mirédin O, Mangelinck D, Hoummada K, Cadel E, Blavette D, Deconihout B, Perrin-Pellegrino C (2007) Snowplow effect and reactive diffusion in the Pt doped Ni–Si system. Scripta Mater 57:373–376. https://doi.org/10.1016/j.scriptamat.2007.05.007CrossRef

39.

Mangelinck D, Hoummada K, Panciera F, El Kousseifi M, Blum I, Descoins M, Bertoglio M, Portavoce A, Perrin C, Putero M (2014) Progress in the understanding of Ni silicide formation for advanced MOS structures, Physica Status Solidi A-Applications and Materials. Science 211:152–165. https://doi.org/10.1002/pssa.201300167CrossRef

40.

Demeulemeester J, Smeets D, Van Bockstael C, Detavernier C, Comrie CM, Barradas NP, Vieira A, Vantomme A (2008) Pt redistribution during Ni(Pt) silicide formation. Appl Phys Lett 93:261912. https://doi.org/10.1063/1.3058719CrossRef

41.

Schrauwen A, Demeulemeester J, Kumar A, Vandervorst W, Comrie CM, Detavernier C, Temst K, Vantomme A (2013) On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction. J Appl Phys 114:063518. https://doi.org/10.1063/1.4818333CrossRef

42.

Wopersnow W, Schubert K (1977) Nickel-palladium-germanium alloys. Journal of the Less Common Metals 52:1–12. https://doi.org/10.1016/0022-5088(77)90230-2CrossRef

43.

d’Heurle FM, Gas P, Philibert J (1995) Diffusion - reaction: the ordered Cu3Au rule and its corollaries. Solid State Phenom. https://doi.org/10.4028/www.scientific.net/SSP.41.93CrossRef

44.

Mangelinck D, Hoummada K, Portavoce A, Perrin C, Daineche R, Descoins M, Larson DJ, Clifton PH (2010) Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si. Scripta Mater 62:568–571. https://doi.org/10.1016/j.scriptamat.2009.12.044CrossRef

45.

Nicolet MA, Lau SS (1983) Chapter 6 - formation and characterization of transition-metal silicides. In: Einspruch NG, Larrabee GB (eds) VLSI electronics microstructure science. Elsevier, Hoboken, pp 329–464. https://doi.org/10.1016/B978-0-12-234106-9.50011-8CrossRef

46.

Cahn RW, Haasen P (1996) Physical metallurgy. Elsevier, Hoboken

47.

Zhang Z, Bai B, Peng H, Gong S, Guo H (2015) Effect of Ru on interdiffusion dynamics of β-NiAl/DD6 system: a combined experimental and first-principles studies. Mater Des 88:667–674. https://doi.org/10.1016/j.matdes.2015.09.041CrossRef

48.

Bai M, Jiang H, Chen Y, Chen Y, Grovenor C, Zhao X, Xiao P (2016) Migration of sulphur in thermal barrier coatings during heat treatment. Mater Des 97:364–371. https://doi.org/10.1016/j.matdes.2016.02.109CrossRef

49.

Nicolet M-A (1978) Diffusion barriers in thin films. Thin Solid Films 52:415–443. https://doi.org/10.1016/0040-6090(78)90184-0CrossRef

50.

Kaloyeros A, Eisenbraun E (2000) Ultrathin diffusion barriers liners for gigascale copper metallization. Ann Rev Maters Sci - ANNU REV MATER SCI 30:363–385. https://doi.org/10.1146/annurev.matsci.30.1.363CrossRef

51.

Tung RT (1996) Oxide mediated epitaxy of CoSi2 on silicon. Appl Phys Lett 68:3461–3463. https://doi.org/10.1063/1.115793CrossRef

52.

Ohmi S, Tung RT (1999) Oxide mediated epitaxial growth of CoSi2 in a single deposition step, MRS Online Proceedings Library (OPL). 564. https://doi.org/10.1557/PROC-564-117

53.

Detavernier C, Lavoie C (2004) Texture of silicide films on Si(001): the occurrence of axiotaxy in cubic CoSi2, tetragonal alpha-FeSi2 and orthorhombic NiSi

Title: Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration
Authors: Khalid Quertite
Jianbao Gao
Marion Descoins
Maxime Bertoglio
Christophe Girardeaux
Dominique Mangelinck
Publication date: 03-03-2022
Publisher: Springer US
Published in: Journal of Materials Science / Issue 10/2022
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-022-07012-2

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Other articles of this Issue 10/2022

Facile construction of single-crystalline sodium niobate anode materials: insight into the relationship of the morphology and excellent performance for lithium-ion batteries

Enhanced room-temperature magnetoresistance of hybrid graphene nanosheets produced by a laser-assisted process

Synthesis and evaluation of N,N-dibutylundecenamide as new eco-friendly plasticizer for polyvinyl chloride

Relation between chemical composition, morphology, and microstructure of poly(ether ether ketone)/reduced graphene oxide nanocomposite coatings obtained by electrophoretic deposition

Effect of morphology and stacking on atomic interaction and magnetic characteristics in two-dimensional H-phase VS2 few layers

Zinc-doped hydroxyapatite and poly(propylene fumarate) nanocomposite scaffold for bone tissue engineering

Premium Partners