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Journal of Materials Science: Materials in Electronics

Published in:

27-10-2020

Effects of annealing process on thermoelectric performance for Pb-doped BiCuSeO

Authors: Yue-Xing Chen, Ruoyang Li, Zhuchen He, Zhuanghao Zheng, Fu Li, Jingting Luo, Ping Fan

Published in: Journal of Materials Science: Materials in Electronics | Issue 23/2020

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Abstract

In this work, we investigated the effects of annealing process on thermoelectric performance for Pb_0.06Bi_0.94Cu_0.94SeO sample. Under the appropriate annealing time of 573 K, the electrical conductivity was significantly improved on the premises of a higher carrier concentration. As a result, a high power factor of 1096 µWm⁻¹ K⁻² was achieved at 323 K. Furthermore, the lattice thermal conductivity obviously decreased as the annealing time rose up to 3 days, which mostly benefited from the stronger phonon scattering and the precipitation of the second phase. Consequently, for the Pb_0.06Bi_0.94Cu_0.94SeO sample annealed for 1 day, a maximum ZT value of 0.85 was obtained at 873 K, which was 57% and 12% higher than those of pristine BiCuSeO and un-annealed sample, respectively. This work proposes an effective post-treatment strategy to enhance the thermoelectric properties of BiCuSeO-based compounds.

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Title: Effects of annealing process on thermoelectric performance for Pb-doped BiCuSeO
Authors: Yue-Xing Chen
Ruoyang Li
Zhuchen He
Zhuanghao Zheng
Fu Li
Jingting Luo
Ping Fan
Publication date: 27-10-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 23/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-04675-y

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