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Published in: Journal of Materials Science: Materials in Electronics 4/2016

26-12-2015

Effects of deposition temperature on structural, optical and electrical properties of TEA complexed nanocrystalline films of PbS prepared from lead acetate with reduced concentration

Authors: B. J. Baruah, M. N. Bora, L. Saikia, D. Saikia, P. Phukan, K. C. Sarma

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2016

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Abstract

A number of researchers have been synthesising thin films of PbS on glass substrates by reaction of 1 M CH4N2S with of 0.50 M Pb(CH3COO)2.3H2O complexed by 1 M triethanolamine (TEA) at different deposition temperatures and reported various temperature dependent properties of the films. In our work, we followed the same recipe but reduced the concentration of Pb(CH3COO)2.3H2O by 0.10 M. The pH of the bath was adjusted at 12. The deposition has been carried out at five different temperatures—30, 40, 50, 64 and 70 °C. We wish to study how structural, optical and electrical properties of the films prepared with reduced concentration of Pb(CH3COO)2.3H2O change with temperature. We have observed that at 30 and 40 °C, no crystalline PbS phase was formed, only elemental S was detected. The PbS phase formation was noticed only from 50 °C. The elemental S has been subdued and the crystalline PbS phase formation has been enhanced with increase of temperature. The average crystallite sizes were determined from XRD by Debye–Scherrer formula, lattice constants from Nelson–Riley plot, band gaps by the derivative method and electrical conductivities from current–voltage characteristics. It has been found that with the increase of deposition temperature, the crystallite size increases, strain decreases, band gap reduces and conductivity improves. The average crystallite sizes were found 35.79, 42.51 and 42.67 nm at 50, 64 and 70 °C respectively. The band gaps for these three films were noted as 1.74, 1.67 and 1.66 eV respectively indicating blue-shift from the bulk value. The tail widths of localised states in the forbidden band were observed in the range of (0.70–0.76) eV. The strains in the films were ~10−3 and conductivities were ~10−7–10−6 (Ω cm)−1.

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Literature
1.
go back to reference N. Choudhury, B.K. Sarma, Indian J. Pure Appl. Phys. 46, 261 (2008) N. Choudhury, B.K. Sarma, Indian J. Pure Appl. Phys. 46, 261 (2008)
4.
go back to reference P. Yang, C.F. Song, M.K. Lu, X. Yin, G.J. Zhou, D. Xu, D.R. Yuan, Chem. Phys. Lett. 345, 429 (2001)CrossRef P. Yang, C.F. Song, M.K. Lu, X. Yin, G.J. Zhou, D. Xu, D.R. Yuan, Chem. Phys. Lett. 345, 429 (2001)CrossRef
7.
go back to reference A. Martucci, J. Fick, J. Schell, G. Battaglin, M. Guglielmi, J. Appl. Phys. 86, 79 (1999)CrossRef A. Martucci, J. Fick, J. Schell, G. Battaglin, M. Guglielmi, J. Appl. Phys. 86, 79 (1999)CrossRef
10.
14.
go back to reference S. Kaci, A. Keffous, M. Trari, O. Fellahi, H. Menari, A. Manseri, L. Guerbous, J. Lumin. 130, 1849 (2010)CrossRef S. Kaci, A. Keffous, M. Trari, O. Fellahi, H. Menari, A. Manseri, L. Guerbous, J. Lumin. 130, 1849 (2010)CrossRef
15.
go back to reference N.B. Kotadiya, A.J. Kothari, D. Tiwari, T.K. Chaudhuri, Appl. Phys. A 108, 819 (2012)CrossRef N.B. Kotadiya, A.J. Kothari, D. Tiwari, T.K. Chaudhuri, Appl. Phys. A 108, 819 (2012)CrossRef
16.
go back to reference M.S. Ghamsari, M.K. Araghi, S.J. Farahani, Mater. Sci. Eng., B 133, 113 (2006)CrossRef M.S. Ghamsari, M.K. Araghi, S.J. Farahani, Mater. Sci. Eng., B 133, 113 (2006)CrossRef
17.
go back to reference R. Devi, P. Purkayastha, P.K. Kalita, B.K. Sarma, Bull. Mater. Sci. 30, 123 (2007)CrossRef R. Devi, P. Purkayastha, P.K. Kalita, B.K. Sarma, Bull. Mater. Sci. 30, 123 (2007)CrossRef
18.
go back to reference H. Khallaf, I.O. Oladeji, G. Chai, L. Chow, Thin Solid Films 516, 7306 (2008)CrossRef H. Khallaf, I.O. Oladeji, G. Chai, L. Chow, Thin Solid Films 516, 7306 (2008)CrossRef
19.
go back to reference R. Mendoza-Pérez, G. Santana-Rodríguez, J. Sastre-Hernández, A. Morales-Acevedo, A. Arias-Carbajal, O. Vigil-Galan, J.C. Alonso, G. Contreras-Puente, Thin Solid Films 480–481, 173 (2005)CrossRef R. Mendoza-Pérez, G. Santana-Rodríguez, J. Sastre-Hernández, A. Morales-Acevedo, A. Arias-Carbajal, O. Vigil-Galan, J.C. Alonso, G. Contreras-Puente, Thin Solid Films 480–481, 173 (2005)CrossRef
21.
go back to reference T.L. Remadevi, K.C. Preetha, J. Mater. Sci. Mater. Electron. 23, 2017 (2012)CrossRef T.L. Remadevi, K.C. Preetha, J. Mater. Sci. Mater. Electron. 23, 2017 (2012)CrossRef
22.
24.
go back to reference J. Hernńdez-Borja, Y.V. Vorobiev, R. Ramírez-Bon, Solar Energy Mater. Solar Cells 95, 1882 (2011)CrossRef J. Hernńdez-Borja, Y.V. Vorobiev, R. Ramírez-Bon, Solar Energy Mater. Solar Cells 95, 1882 (2011)CrossRef
25.
go back to reference K.C. Preetha, T.L. Remadevi, J. Mater. Sci. Mater. Electron. 24, 489 (2013)CrossRef K.C. Preetha, T.L. Remadevi, J. Mater. Sci. Mater. Electron. 24, 489 (2013)CrossRef
26.
go back to reference R.A. Orozco-Teran, M. Sotelo-Lerma, R. Ramirez-Bon, M.A. Quevedo-Lopez, O. Mendoza-Gonzalez, O. Zelava Angel, Thin Solid Films 343–344, 587 (1999)CrossRef R.A. Orozco-Teran, M. Sotelo-Lerma, R. Ramirez-Bon, M.A. Quevedo-Lopez, O. Mendoza-Gonzalez, O. Zelava Angel, Thin Solid Films 343–344, 587 (1999)CrossRef
28.
go back to reference J.J. Valenzuela-Jauregui, R. Ramırez-Bon, A. Mendoza-Galván, M. Sotelo-Lerma, Thin Solid Films 441, 104 (2003)CrossRef J.J. Valenzuela-Jauregui, R. Ramırez-Bon, A. Mendoza-Galván, M. Sotelo-Lerma, Thin Solid Films 441, 104 (2003)CrossRef
29.
go back to reference E. Pentia, L. Pintilie, T. Botila, I. Pintilie, A. Chaparro, C. Maffiotte, Thin Solid Films 434, 162 (2003)CrossRef E. Pentia, L. Pintilie, T. Botila, I. Pintilie, A. Chaparro, C. Maffiotte, Thin Solid Films 434, 162 (2003)CrossRef
30.
go back to reference A. Slonopas, N. Alijabbari, C. Saltonstall, T. Globus, P. Norris, Electrochim. Acta 151, 140 (2015)CrossRef A. Slonopas, N. Alijabbari, C. Saltonstall, T. Globus, P. Norris, Electrochim. Acta 151, 140 (2015)CrossRef
31.
go back to reference M.A.M. Khan, S. Kumar, M.N. Khan, M. Ahamed, A.S. Al Dwayyan, J. Lumin. 155, 275 (2014)CrossRef M.A.M. Khan, S. Kumar, M.N. Khan, M. Ahamed, A.S. Al Dwayyan, J. Lumin. 155, 275 (2014)CrossRef
33.
34.
go back to reference K.C. Preetha, T.L. Remadevi, J. Mater. Sci. Mater. Electron. 23, 2017 (2012)CrossRef K.C. Preetha, T.L. Remadevi, J. Mater. Sci. Mater. Electron. 23, 2017 (2012)CrossRef
35.
go back to reference M.M. Abbas, A. Ab-M Shehab, A.-K. Al-Samuraee, N.-A. Hassan, Energy Procedia 6, 241 (2011)CrossRef M.M. Abbas, A. Ab-M Shehab, A.-K. Al-Samuraee, N.-A. Hassan, Energy Procedia 6, 241 (2011)CrossRef
36.
37.
go back to reference A.S. Obaid, M.A. Mahdi, Z. Hassan, M. Bououdina, Mater. Sci. Semicond. Process. 15, 564 (2012)CrossRef A.S. Obaid, M.A. Mahdi, Z. Hassan, M. Bououdina, Mater. Sci. Semicond. Process. 15, 564 (2012)CrossRef
39.
41.
go back to reference S. Srinivasan, F. Bertram, A. Bell, F.A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, Appl. Phys. Lett. 80, 550 (2002)CrossRef S. Srinivasan, F. Bertram, A. Bell, F.A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa, Appl. Phys. Lett. 80, 550 (2002)CrossRef
42.
43.
go back to reference D. Kumar, G. Agarwal, B. Tripathi, D. Vyas, V. Kulshrestha, J. Alloys Compd. 484, 463 (2009)CrossRef D. Kumar, G. Agarwal, B. Tripathi, D. Vyas, V. Kulshrestha, J. Alloys Compd. 484, 463 (2009)CrossRef
Metadata
Title
Effects of deposition temperature on structural, optical and electrical properties of TEA complexed nanocrystalline films of PbS prepared from lead acetate with reduced concentration
Authors
B. J. Baruah
M. N. Bora
L. Saikia
D. Saikia
P. Phukan
K. C. Sarma
Publication date
26-12-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-4242-2

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