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Published in:
29-08-2016
Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition
Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2017
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Abstract
High-quality lead-free piezoelectric xMn-doped (K0.48Na0.52)0.985Li0.015NbO3 films (KNLN; x = 0, 0.01, 0.02, 0.03) were successfully deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method. Effects of Mn substitution on the microstructure, dielectric properties, ferroelectric properties, and leakage current of the KNLN films were investigated in detail. Mn-doping can significantly improve the ferroelectric properties and decrease the leakage current of KNLN films. Optimal dielectric properties were obtained in films doped with 2 mol% Mn, whose dielectric constant and dielectric loss at 1 kHz were 875 and 0.030, respectively. In addition, well-saturated ferroelectric P-E hysteresis loop with large remanent polarization (2P
r) and coercive field (E
c) of 22.5 μC/cm2 and 65 kV/cm were obtained in 2 mol% Mn-doped KNLN film at an applied electric field of 200 kV/cm.