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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 11/2018

20-03-2018

Effects of potassium interstitial doping on thermoelectric properties of Sr0.7Ba0.3Nb2O6−δ ceramics

Authors: Yi Li, Yacui Zhang, Jian Liu, Yufei Chen, Jichao Li, Wenbin Su, Chunlei Wang

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2018

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Abstract

The thermoelectric properties of potassium interstitial doped Sr0.7Ba0.3KxNb2O6−δ ceramics were investigated in the temperature range from 323 to 1073 K. The thermoelectric power factor is improved enormously due to the potassium interstitial doping combined with a reductive calcination method. The potassium dopants not only act as carrier donors but also modulate the electronic structures. Thus, the electrical conductivity increases remarkably, and the Seebeck coefficient, meanwhile, maintains considerable values at high temperatures. Only the moderate doping content x = 0.10 contributes to reducing the lattice thermal conductivity. Thus, the sample Sr0.7Ba0.3K0.1Nb2O6−δ shows the highest ZT value of 0.23 at 1073 K.
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Metadata
Title
Effects of potassium interstitial doping on thermoelectric properties of Sr0.7Ba0.3Nb2O6−δ ceramics
Authors
Yi Li
Yacui Zhang
Jian Liu
Yufei Chen
Jichao Li
Wenbin Su
Chunlei Wang
Publication date
20-03-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8941-3

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