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Published in: Microsystem Technologies 4/2016

01-02-2015 | Technical Paper

Electromechanical modeling and simulation by the Euler–Lagrange method of a MEMS inertial sensor using a FGMOS as a transducer

Authors: G. Stephany Abarca-Jiménez, M. Alfredo Reyes-Barranca, Salvador Mendoza-Acevedo, Jacobo E. Munguía-Cervantes, Miguel A. Alemán-Arce

Published in: Microsystem Technologies | Issue 4/2016

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Abstract

In this paper, the elec tromechanical modeling of a differential capacitive sensor interconnected with a floating-gate MOS (FGMOS) transistor is shown; the model was obtained using the Euler–Lagrange theory to analyze this particular physical system used as an inertial sensor. A design methodology is also shown relating all the physical parameters involved, such as: stiffness, damping associated with the capacitive structure, parasitic capacitances present in the transistor, and the maximum operating voltages to avoid pull-in effect. Cases for symmetric and non symmetric differential capacitance comb arrays are analyzed. A model comparison between conventional mass–spring–damper mechanical systems to a specific electromechanical system for capacitive sensor with its associated readout electronics is shown.

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Metadata
Title
Electromechanical modeling and simulation by the Euler–Lagrange method of a MEMS inertial sensor using a FGMOS as a transducer
Authors
G. Stephany Abarca-Jiménez
M. Alfredo Reyes-Barranca
Salvador Mendoza-Acevedo
Jacobo E. Munguía-Cervantes
Miguel A. Alemán-Arce
Publication date
01-02-2015
Publisher
Springer Berlin Heidelberg
Published in
Microsystem Technologies / Issue 4/2016
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-015-2429-3

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