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2018 | Book

Introduction Read chapter Read first chapter

Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

Editor: Hideto Hidaka

Publisher: Springer International Publishing

Book Series : Integrated Circuits and Systems

Part of: Springer Professional "Wirtschaft+Technik" , Springer Professional "Technik" , Springer Professional "Wirtschaft"

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About this book

This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described.

Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed;

Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications;

Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs;

Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs;

Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 40nm node.

Table of Contents

Frontmatter
Chapter 1. Introduction
Abstract
Embedded systems are pervasively utilized in every aspect of the electonic and computing systems‚ and very much supported and advanced by hardware and software developments. Among embedded memory species, embedded flash memory has had unique and important key factors contributing to the advancement of embedded systems and MCU innovations.
Hideto Hidaka
Chapter 2. Applications and Technology Trend in Embedded Flash Memory
Abstract
Chapter 2 first introduces the history of the micro-controller unit (MCU) with significant growth of the market by on-chip flash-memory innovation affecting the whole supply chain from development of hardware and software, to production, inventory control, and lifetime maintenance. Then described are how and why embedded flash memory has expanded functions and applications by finding new embedded uses supported by device, circuit, and sub-system designs followed by expanding variety of applications and requirements by automotive and smart-card applications. Finally embedded flash technology prospects partly leading to the necessity of emerging non-volatile memory development are overviewed.
Hideto Hidaka
Chapter 3. Overview of Embedded Flash Memory Technology
Abstract
This chapter is dedicated to comprehensively survey representative embedded flash-memory technologies from the memory-cell level to the system level. First, various types of embedded flash-memory cells are briefly overviewed in terms of cell structure, operation principle, and features in terms of characteristics and reliability. Then presented are the basic circuit-design techniques required in embedded flash hard macros under different design constraints from stand-alone flash memories. In addition, system-level design, which plays important roles for function enhancement to meet a wide range of requirements, is also covered. Finally, future prospects of eFlash-memory technologies are briefly summarized.
Takashi Kono, Tomoya Saito, Tadaaki Yamauchi
Chapter 4. Floating-Gate 1Tr-NOR eFlash Memory
Abstract
In this chapter, we will highlight the peculiar features of one of the most popular implementations of the embedded flash cell: the so-called 1Tr-NOR. The one-transistor cell has been by far the most adopted cell architecture in the world of flash NOR stand-alone memory. As an almost natural consequence, 1Tr-NOR architecture has also been considered the first, and for sure one of the best, solutions in embedded non-volatile memory (NVM) applications and has been progressively replacing EEPROM cells. In this chapter, only embedded multi-megabit flash implementation will be reviewed: different solutions for 1Tr-NOR flash cell structure and design architectures have been successfully implemented and will be described. In particular, the focus hereinafter is based on the description of how the unique features offered by that cell can be efficiently and effectively integrated into MCUs, which represent one of the major fields fueled by embedded flash capability. In the following sections, after a short introduction devoted to highlighting some peculiar technology features related to 1Tr-NOR integration with state-of-the-art CMOS, three different kind of MCU products will be thoroughly analysed:
  • the secure MCU.
  • the general-purpose/low-power MCU.
  • the automotive MCU.
Antonino Conte, Fabio Disegni, Francesco La Rosa, Alfonso Maurelli
Chapter 5. Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability
Abstract
Split-gate embedded flash memory technology has been around for a couple of decades and has become a de facto standard for embedded products such as microcontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM or stacked-gate solutions. This chapter covers the fundamentals of split-gate embedded flash memories with an emphasis on SST’s widely adopted SuperFlash® memory technology as an example to demonstrate the benefits of a split-gate embedded flash-memory technologies. The fundamentals of SuperFlash technology, design, reliability, and scalability are discussed in detail in various sections, which would provide a detailed understanding of a split-gate, embedded flash-memory technology.
Nhan Do, Hieu Van Tran, Alex Kotov, Vipin Tiwari
Chapter 6. SONOS 1Tr eFlash Memory
Abstract
In this chapter, a brief history of SONOS flash technology is introduced followed by the details of one-transistor SONOS (1Tr-SONOS) technology. Memory-cell structure, basic cell-operation principles and fabrication process are described. Then basic array architecture and read/program/erase operations are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit techniques to expand application range, especially for automotive use with high reliability and low energy consumption are described.
Hidenori Mitani, Ken Matsubara
Chapter 7. SONOS Split-Gate eFlash Memory
Abstract
Technological details about SONOS split-gate eFlash memory are described. First, memory cell structure, basic cell-operation principles and eFlash-fabrication process are introduced. Subsequently, basic array architecture and read/program/erase operations are explained by block/schematic diagrams of corresponding peripheral circuits. A data-retention model of the SONOS split-gate eFlash memory is also discussed. Finally, advanced-circuit and process technologies are described. As for circuit technologies, the techniques to expand the application range especially for automotive use, which requires both high performance and high reliability are described. Regarding process technology, the scalability of SONOS split-gate eFlash memory is explained placing emphasis on the measurement data for affinity with advanced-logic CMOS process.
Takashi Ito, Yasuhiko Taito
Backmatter
Metadata
Title
Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations
Editor
Hideto Hidaka
Copyright Year
2018
Electronic ISBN
978-3-319-55306-1
Print ISBN
978-3-319-55305-4
DOI
https://doi.org/10.1007/978-3-319-55306-1