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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2017

03-09-2016

Energy-storage performance and pyroelectric energy harvesting effect of PNZST antiferroelectric thin films

Authors: Xiaolin Wang, Xihong Hao, Qiwei Zhang, Shengli An, Xiujian Chou

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2017

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Abstract

In this work, (111)-oriented (Pb0.99Nb0.02)(Zr, Sn, Ti)0.98O3 (PNZST) antiferroelectric thin films, which located in the tetragonal phase region (PNZSTT) and the orthorhombic phase region (PNZSTO), respectively, were successfully fabricated on platinum-buffered silicon substrates by radio-frequency magnetron sputtering technique. The microstructure, dielectric properties, electric field induced phase transition, associated with the energy-storage performance and pyroelectric energy harvesting behavior (by Olsen cycle) were studied systemically. The PNZSTT thin film showed a diffused field-induced antiferroelectric–ferroelectric (AFE–FE) phase switching with a slim double hysteresis loop, while the PNZSTO film demonstrated an AFE–FE phase switching with a square double hysteresis loop. A maximum recoverable energy-storage density of 16.4 and 12.4 J/cm3 were obtained in the PNZSTT and PNZSTO film, respectively. Moreover, a huge harvested energy density per cycle of W = 7.35 and 5.35 J/cm3 was also predicted in the PNZSTT and PNZSTO film at 1 kHz, respectively. The good energy-storage performance and giant thermal-electrical energy harvesting effect of the PNZST antiferroelectric thin films maybe make a great impact on the modern energy-storage technology and the thermal-electrical energy harvesting applications.
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Metadata
Title
Energy-storage performance and pyroelectric energy harvesting effect of PNZST antiferroelectric thin films
Authors
Xiaolin Wang
Xihong Hao
Qiwei Zhang
Shengli An
Xiujian Chou
Publication date
03-09-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5679-7

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