Skip to main content
Top
Published in: Journal of Materials Science: Materials in Electronics 9/2018

26-02-2018

Enhancement of electro-optic and structural properties of TGS single crystals on doping with l-glutamic acid

Authors: Preeti Singh, M. M. Abdullah, Suresh Sagadevan, Saiqa Ikram

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2018

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Single crystals of pure and l-glutamic acid (LG) doped Triglycine Sulfate (TGS) crystals were grown by slow evaporation solution technique at ambient conditions. Effect of doping on various properties of the grown crystals was investigated. Powder X-ray diffraction (PXRD) studies confirmed the monoclinic system of crystal structure with lattice parameter a = ~ 9.28 Å, b = ~ 12.7 Å, and c = ~ 5.73 Å, and space group of P21. PXRD and Fourier-Transform Raman (FT-Raman) analysis confirmed that there is no new phase formation due to doping except a systematic variation in the intensity of the peaks in correlation with the morphology due to LG doping. The Raman bands obtained in the spectrum corresponds to NH3 vibrations, the stretching vibrations of COO, carboxyl vibrations, and vibrational modes of SO42−. Ultraviolet–Visible Spectroscopy (UV-Vis-NIR) analysis was carried out to see the changes in the optical transparency of pure TGS crystals due to LG doping. Optical band gaps (5.24 eV for PRTGS, and 5.07 eV for LGTGS) were calculated and found to decrease due to doping. The photoluminescence excitation and emission were studied. The thermal behavior of the grown crystal was investigated by Thermogravimetric analysis/Differential thermal analysis. Second harmonic generation (SHG) efficiency measurement showed the enhancement in the nonlinear optical characteristics of the as-grown pure and doped TGS single crystals. In the present study, the researchers found the good and comparable SHG efficiency with KDP in TGS crystals by LG doping for the first time. The surface morphology of the grown TGS single crystals was analyzed by using Scanning Electron Microscope. The mechanical studies showed the Mayer’s index (n) greater than 1.6 and thus predicting a soft-material nature of the as-grown crystals. The values of fracture toughness (Kc), brittleness indices (Bi), and yield strength (σν) were estimated for the crystals. The dielectric constant and the dielectric loss decreased with an increase in the value of frequency. Hysteresis loop showed a negligible change in the doped TGS. The above studies reveal the effect of incorporation of LG into the lattice of TGS crystals.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference J. van der Geer, J.A.J. Hanraads, R.A. Lupton, J. Sci. Commun. 163, 51–59 (2010) J. van der Geer, J.A.J. Hanraads, R.A. Lupton, J. Sci. Commun. 163, 51–59 (2010)
2.
go back to reference G. Su, Y. He, H. Yao, Z. Shi, Q. Wu, J. Cryst. Growth 209, 220–222 (2000) G. Su, Y. He, H. Yao, Z. Shi, Q. Wu, J. Cryst. Growth 209, 220–222 (2000)
3.
go back to reference G. Singh, P. Singh, S. Singh, Int. J. Res. Pract. Eng. Sci. 1, 110–113 (2012) G. Singh, P. Singh, S. Singh, Int. J. Res. Pract. Eng. Sci. 1, 110–113 (2012)
4.
go back to reference N. Sinha, N. Goel, B.K. Singh, M.K. Gupta, B. Kumar, J. Solid State Chem. 190, 180–185 (2012) N. Sinha, N. Goel, B.K. Singh, M.K. Gupta, B. Kumar, J. Solid State Chem. 190, 180–185 (2012)
5.
go back to reference G. Montemmezzani, J. Fousek, P. Gunter, J. Stankoswka, Appl. Phys. Lett. 56, 2367 (1990) G. Montemmezzani, J. Fousek, P. Gunter, J. Stankoswka, Appl. Phys. Lett. 56, 2367 (1990)
6.
go back to reference N.T. Shanthi, P. Selvarajan, C.K. Mahadevan, Indian J. Sci. Technol. 2, 49–52 (2009) N.T. Shanthi, P. Selvarajan, C.K. Mahadevan, Indian J. Sci. Technol. 2, 49–52 (2009)
7.
go back to reference D. Jayalakhsmi, J. Kumar, J. Cryst. Growth 310, 1497–1500 (2008) D. Jayalakhsmi, J. Kumar, J. Cryst. Growth 310, 1497–1500 (2008)
8.
go back to reference N. Nakatani, T. Kikuta, T. Yamazaki, Ferroelectrics 368, 12–22 (2008) N. Nakatani, T. Kikuta, T. Yamazaki, Ferroelectrics 368, 12–22 (2008)
9.
go back to reference J. Logeswari, Optoelectron. Adv. Mater. Rapid Commun. 2, 630–634 (2008) J. Logeswari, Optoelectron. Adv. Mater. Rapid Commun. 2, 630–634 (2008)
10.
go back to reference R.S. Krishnan, K. Balasubramanian, Indian Inst. Sci. 48, 138–144 (1958) R.S. Krishnan, K. Balasubramanian, Indian Inst. Sci. 48, 138–144 (1958)
11.
go back to reference E.M. Mihaylova, H.J. Byrne, J. Phys. Chem. Solid 61, 1919–1925 (2000) E.M. Mihaylova, H.J. Byrne, J. Phys. Chem. Solid 61, 1919–1925 (2000)
12.
go back to reference A.J.J. Manoharan, N.J. John, V. Revathi, K.V. Rajendran, P.M. Andavan, Indian J. Sci. Technol. 4, 688–691 (2011) A.J.J. Manoharan, N.J. John, V. Revathi, K.V. Rajendran, P.M. Andavan, Indian J. Sci. Technol. 4, 688–691 (2011)
13.
go back to reference Z. Kecong, S. Jiancheng, W. Min, F. Changshui, L. Mengkai, J. Cryst. Growth 82, 639–642 (1987) Z. Kecong, S. Jiancheng, W. Min, F. Changshui, L. Mengkai, J. Cryst. Growth 82, 639–642 (1987)
14.
go back to reference P. Singh, M.M. Abdullah, S. Sagadevan, S. Ikram, J. Mater. Sci. 28, 6520–6528 (2017) P. Singh, M.M. Abdullah, S. Sagadevan, S. Ikram, J. Mater. Sci. 28, 6520–6528 (2017)
15.
go back to reference S.K. Kurtz, T.T. Perry, J. Appl. Phys. 39, 3798 (1968) S.K. Kurtz, T.T. Perry, J. Appl. Phys. 39, 3798 (1968)
16.
go back to reference K. Balasubramanian, P. Selvarjun, E. Kumar, Indian J. Sci. Technol. 3, 41–43 (2010) K. Balasubramanian, P. Selvarjun, E. Kumar, Indian J. Sci. Technol. 3, 41–43 (2010)
17.
go back to reference P. Singh, M.M. Abdullah, M. Shakir, M. Hasmuddin, M.A. Wahab, Int. J. Pure Appl. Phys. 8, 9–19 (2012) P. Singh, M.M. Abdullah, M. Shakir, M. Hasmuddin, M.A. Wahab, Int. J. Pure Appl. Phys. 8, 9–19 (2012)
18.
go back to reference A. Parameswari, M.K. Dhas, A.M.F. Benial, Int. J. Sci. Eng. Res. 5, 3 A. Parameswari, M.K. Dhas, A.M.F. Benial, Int. J. Sci. Eng. Res. 5, 3
19.
go back to reference M. Hasmuddin, P. Singh, M. Shkir, M.M. Abdullah, N. Vijayan, G. Bhagavannarayana, M.A. Wahab, Spectrochim. Acta Part A Mol. Biomol. Spectrosc. 123, 376–384 (2014) M. Hasmuddin, P. Singh, M. Shkir, M.M. Abdullah, N. Vijayan, G. Bhagavannarayana, M.A. Wahab, Spectrochim. Acta Part A Mol. Biomol. Spectrosc. 123, 376–384 (2014)
20.
go back to reference S. Gokul Raj, G.R. Kumar, R. Mohan, R. Jayavel, B. Varghese, Phys. Status Solid B 244, 558–568 (2007) S. Gokul Raj, G.R. Kumar, R. Mohan, R. Jayavel, B. Varghese, Phys. Status Solid B 244, 558–568 (2007)
21.
go back to reference S. Suresh, D. Arivuoli, J. Miner. Mater. Charact. Eng. 10, 517–526 (2011) S. Suresh, D. Arivuoli, J. Miner. Mater. Charact. Eng. 10, 517–526 (2011)
23.
go back to reference S. Suresh, Opt. Int. J. Light Electron Opt. 125, 1223–1226 (2014) S. Suresh, Opt. Int. J. Light Electron Opt. 125, 1223–1226 (2014)
24.
go back to reference S. Suresh, Opt. Int. J. Light Electron Opt. 125, 950–953 (2014) S. Suresh, Opt. Int. J. Light Electron Opt. 125, 950–953 (2014)
25.
go back to reference T. Bharathasarathi, V.S. Shankar, R. Jayavel, P. Murugakoothan, J. Cryst. Growth 311, 1147–1151 (2009) T. Bharathasarathi, V.S. Shankar, R. Jayavel, P. Murugakoothan, J. Cryst. Growth 311, 1147–1151 (2009)
26.
go back to reference F. Khanum, J. Podder, J. Crysatll. Process Technol. 1, 26–31 (2011) F. Khanum, J. Podder, J. Crysatll. Process Technol. 1, 26–31 (2011)
27.
go back to reference P. Singh, M. Hasmuddin, M.M. Abdullah, M. Shkir, M.A. Wahab, Mater. Res. Bull. 48, 3926–3933 (2013) P. Singh, M. Hasmuddin, M.M. Abdullah, M. Shkir, M.A. Wahab, Mater. Res. Bull. 48, 3926–3933 (2013)
28.
go back to reference S. Chennakrishnan, S.M. Ravi Kumar, C. Shanthi, R. srineevasan, T. Kubendiran, D. Sivavishnu, M.P. Raj, J. Taibah Univ. Sci. 11, 955–965 (2017) S. Chennakrishnan, S.M. Ravi Kumar, C. Shanthi, R. srineevasan, T. Kubendiran, D. Sivavishnu, M.P. Raj, J. Taibah Univ. Sci. 11, 955–965 (2017)
29.
go back to reference P. Singh, M. Hasmuddin, M. Shakir, N. Vijayan, M.M. Abdullah, V. Ganesh, M.A. Wahab, Mater. Chem. Phys. 142, e154–e164 (2013) P. Singh, M. Hasmuddin, M. Shakir, N. Vijayan, M.M. Abdullah, V. Ganesh, M.A. Wahab, Mater. Chem. Phys. 142, e154–e164 (2013)
30.
go back to reference H.N. Das, J. Podder, J. Therm. Anal. Calorim. 110, 1107–1112 (2012) H.N. Das, J. Podder, J. Therm. Anal. Calorim. 110, 1107–1112 (2012)
31.
go back to reference S. Gunasekaran, P. Venkatesan, G. Anand, S. Kumaresan, Int. J. Chem. Technol. Res. 4, 1072–1076 (2012) S. Gunasekaran, P. Venkatesan, G. Anand, S. Kumaresan, Int. J. Chem. Technol. Res. 4, 1072–1076 (2012)
32.
go back to reference K. Srinivasan, P. Dhansekran, J. Cryst. Growth 318, 1080–1084 (2011) K. Srinivasan, P. Dhansekran, J. Cryst. Growth 318, 1080–1084 (2011)
33.
go back to reference M. Shakir, V. Ganesh, M.A. Wahab, G. Bhagvennarayana, K.K. Rao, Mater. Sci. Eng. B 172(9), 9–14 (2010) M. Shakir, V. Ganesh, M.A. Wahab, G. Bhagvennarayana, K.K. Rao, Mater. Sci. Eng. B 172(9), 9–14 (2010)
34.
go back to reference T. Bharthasarathi, O.P. Thakur, P. Murugakoothan, Physica B 405, 3943–3948 (2010) T. Bharthasarathi, O.P. Thakur, P. Murugakoothan, Physica B 405, 3943–3948 (2010)
35.
go back to reference S. karan, S.S. Gupta, S.P.S. Gupta, Mater. Chem. Phys. 69, 143 (2001) S. karan, S.S. Gupta, S.P.S. Gupta, Mater. Chem. Phys. 69, 143 (2001)
36.
37.
go back to reference C. Hays, E.G. Kendall, Metallography 6, 275 (1973) C. Hays, E.G. Kendall, Metallography 6, 275 (1973)
38.
go back to reference V. Gupta, K.K. Bamzai, P.N. Kortu, B.M. Wankyln, Mater. Chem. Phys. 89, 64–71 (2005) V. Gupta, K.K. Bamzai, P.N. Kortu, B.M. Wankyln, Mater. Chem. Phys. 89, 64–71 (2005)
39.
go back to reference C.B. Proton, R.D. Rawling, Br. Ceram. Trans. J. 88, 83–90 (1989) C.B. Proton, R.D. Rawling, Br. Ceram. Trans. J. 88, 83–90 (1989)
40.
go back to reference K.K. Bamzi, P.N. Korthu, B.M. Wankyln, J. Mater. Sci. 4, 405–410 (2000) K.K. Bamzi, P.N. Korthu, B.M. Wankyln, J. Mater. Sci. 4, 405–410 (2000)
41.
go back to reference J.P. Cahoon, W.H. Broughton, A.R. Katzuk, Metall. Trans. 2, 1979–1983 (1971) J.P. Cahoon, W.H. Broughton, A.R. Katzuk, Metall. Trans. 2, 1979–1983 (1971)
42.
go back to reference K.C. Kwo, Dielectrics Phenomenon in Solids (Elsevier Academic press, London, 2004), p. 54 K.C. Kwo, Dielectrics Phenomenon in Solids (Elsevier Academic press, London, 2004), p. 54
43.
go back to reference V.Y. Medvedev, T.A. Kuketaev, M.P. Tonronogov, Russ. Phys. J. 49, 1171–1180 (2006) V.Y. Medvedev, T.A. Kuketaev, M.P. Tonronogov, Russ. Phys. J. 49, 1171–1180 (2006)
44.
go back to reference S. Suresh, A. Ramanand, D. Jayaraman, P. Mani, Optoelectron. Adv. Mater. Rapid Commun. 4, 1763–1765 (2010) S. Suresh, A. Ramanand, D. Jayaraman, P. Mani, Optoelectron. Adv. Mater. Rapid Commun. 4, 1763–1765 (2010)
45.
go back to reference V. Krishnakumar, M. Rajaboopathi, R. Nagalakshmi, Adv. Mater. Lett. 2, 163–169 (2011) V. Krishnakumar, M. Rajaboopathi, R. Nagalakshmi, Adv. Mater. Lett. 2, 163–169 (2011)
Metadata
Title
Enhancement of electro-optic and structural properties of TGS single crystals on doping with l-glutamic acid
Authors
Preeti Singh
M. M. Abdullah
Suresh Sagadevan
Saiqa Ikram
Publication date
26-02-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8790-0

Other articles of this Issue 9/2018

Journal of Materials Science: Materials in Electronics 9/2018 Go to the issue