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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 9/2021

22-04-2021

Enhancing the light absorptance of stain-etched black silicon decorated by TiN nanoparticles

Authors: Kaiqiang Wang, Shuang Liu, Jiacheng Li, Shenglan Wu, Jiankai Xia, Jinping Chen, Chunhui Tian, Yong Liu, Zhiyong Zhong

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2021

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Abstract

Due to the high energy, narrow distribution and breaking through the absorption limitation, plasmon-induced hot electrons have been widely applied to extend the photoresponse spectra of the semiconductor. In order to further enhance the resonance effect of local plasmon based on metallic nanostructures, we used hydrofluoric stain etching method to fabricate nanostructured black silicon (BSi) and deposited titanium nitride (TiN) nanoparticles on its surface by reactive magnetron sputtering. The results show that the BSi modified by plasmonic TiN nanoparticles has higher absorption in wavelength range from 1100 to 2500 nm compared to that of conventional acid etching of BSi. A PIN photoelectronic detector fabricated by the proposed BSi shows excellent device performance with responsivity of 0.45A/W at 1060 nm in near-infrared band.
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Metadata
Title
Enhancing the light absorptance of stain-etched black silicon decorated by TiN nanoparticles
Authors
Kaiqiang Wang
Shuang Liu
Jiacheng Li
Shenglan Wu
Jiankai Xia
Jinping Chen
Chunhui Tian
Yong Liu
Zhiyong Zhong
Publication date
22-04-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05724-w

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