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Journal of Materials Science

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22-04-2020 | Electronic materials

Fast X-ray detectors based on bulk β-Ga₂O₃ (Fe)

Authors: Ibrahim Hany, Ge Yang, Ching-Chang Chung

Published in: Journal of Materials Science | Issue 22/2020

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Abstract

(010) EFG-grown Fe-doped β-Ga₂O₃ was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined. The fabricated detector showed high X-ray detection performance manifested in its signal’s short fall and rise time (< 0.3 s) in all operation modes, showing two orders of magnitude decrease in response time of β-Ga₂O₃ X-ray detectors. The same temporal response was exhibited by a tested Au/Ni/β-Ga₂O₃/Ti/Au device. The detector’s signal is also characterized by excellent linear relation with X-ray tube current and high signal-to-noise ratio (SNR) optimized at − 5 V (> 10³). Moreover, the X-ray-induced current signal exhibits high stability. Sub-band UV photocurrent signal showed a significantly slower response compared to X-ray-induced conductivity signal. Possible charge transport mechanisms involving ion migration are suggested and discussed. In this study, Fe doping is shown to significantly improve X-ray detection performance of Ga₂O₃, consolidating the applicability of Ga₂O₃ as a next-generation X-ray detector functioning with low power, high SNR and linearity, and significantly improved transient characteristics.

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Title: Fast X-ray detectors based on bulk β-Ga2O3 (Fe)
Authors: Ibrahim Hany
Ge Yang
Ching-Chang Chung
Publication date: 22-04-2020
Publisher: Springer US
Published in: Journal of Materials Science / Issue 22/2020
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-020-04665-9

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