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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2014

01-04-2014

Ferroelectric and piezoelectric behavior of (111)-oriented Pb(ZrxTi1−x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

Authors: M. Khodaei, Daehee Seol, S. A. Seyyed Ebrahimi, Yong Jun Park, Hosung Seo, Yunseok Kim, Sunggi Baik

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2014

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Abstract

Perfect (111)-oriented Pb(ZrxTi1−x)O3 (PZT) thin films were grown on cobalt ferrite buffered Pt(111)/Ti/SiO2/Si substrate by pulsed laser deposition method using various targets with different Zr/Ti ratios ranging from 30/70 to 70/30. The results of X-ray diffraction analyses indicated that the composition of morphotropic phase boundary in the present PZT films is same as the bulk PZT (Zr/Ti = 52/48). The effect of Zr/Ti ratio of the PZT films was investigated by the ferroelectric domain structure and the piezoelectric characteristics of the films by piezoresponse force microscopy, as well as polarization measurement. The results revealed that the present tetragonal PZT film has a higher ferroelectric domain switching than rhombohedral one and the film with composition of Zr/Ti = 52/48 showed relatively high value of squareness of P–E loop and Ec as well as high piezoresponse.
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Metadata
Title
Ferroelectric and piezoelectric behavior of (111)-oriented Pb(ZrxTi1−x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate
Authors
M. Khodaei
Daehee Seol
S. A. Seyyed Ebrahimi
Yong Jun Park
Hosung Seo
Yunseok Kim
Sunggi Baik
Publication date
01-04-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1785-6

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