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Microsystem Technologies

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10-02-2018 | Technical Paper

Finite element simulation of a highly sensitive SH-SAW delay line sensor with SiO\(_{2}\) micro-ridges

Authors: Shyam Trivedi, Harshal B. Nemade

Published in: Microsystem Technologies | Issue 8/2018

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Abstract

The paper presents 3D finite element simulation of an SH-SAW delay line sensor to investigate coupled resonance with SiO\(_{2}\) micro-ridges designed along the wave propagation direction on a 36\(^{\circ }\)-YX LiTaO\(_{3}\) substrate. Time response simulation is used to calculate the displacements and voltages at the output IDT. The device generates a shear wave with horizontal displacement component ten times greater than vertical displacement component. Mass loading is simulated by applying an equivalent surface mass density of double-stranded DNA uniformly on the SiO\(_{2}\) ridges. At critical ridge height, both substrate and ridge vibrate in unison leading to a sharp change in the phase shift from negative to positive causing coupled resonance. In the presence of coupled resonance, the device offers high mass sensitivity of 1295 m\(^{2}\)/kg which is about 20 times greater in comparison to the mass sensitivity of a conventional SiO\(_{2}\) based Love wave device. The increase in mass sensitivity at coupled resonance is attributed to the increase in the area-averaged stress at the interface of micro-ridge and substrate, going above 8.5 MPa. As ridge height is varied, a transition occurs in the mode of vibration leading to a 5 dB swing in the insertion loss of the device near the coupled resonant height.

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Title: Finite element simulation of a highly sensitive SH-SAW delay line sensor with SiO micro-ridges
Authors: Shyam Trivedi
Harshal B. Nemade
Publication date: 10-02-2018
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 8/2018
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-018-3772-y

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