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Journal of Nanoparticle Research
Published in: Journal of Nanoparticle Research 11/2020

01-11-2020 | Research paper

First-principles study on the structural stability and electronic properties of GaAs/Ga1−xAlxAs superlattice nanowires

Authors: Lei Liu, Yu Diao, Sihao Xia

Published in: Journal of Nanoparticle Research | Issue 11/2020

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Abstract

In this study, the first-principles method is used to study the structural stability and electronic properties of GaAs/Ga1−xAlxAs and AlxGa1−xAs/AlyGa1−yAs superlattice nanowires. Calculations show that GaAs/Ga1−xAlxAs superlattice nanowires with smaller Al component spacing have higher structural stability. The increase of Al composition will further weaken the stability of GaAs/Ga1−xAlxAs heterostructure nanowires. Compared with the pure GaAs nanowires, the work function of GaAs/Ga1−xAlxAs heterostructure nanowires is all reduced, indicating that the variable Al composition heterostructure can enhance the photoemission ability. In addition, heterostructures with different configurations exhibit different electronic properties. Moreover, a powerful built-in electric field is formed across the GaAs/AlxGa1−xAs superlattice interface, which will further promote the migration of photoelectrons from low Al composition layer to high Al composition layer. GaAs/Ga1−xAlxAs superlattice nanowires are promising to be the high-performance photocathode materials.
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Metadata
Title
First-principles study on the structural stability and electronic properties of GaAs/Ga1−xAlxAs superlattice nanowires
Authors
Lei Liu
Yu Diao
Sihao Xia
Publication date
01-11-2020
Publisher
Springer Netherlands
Published in
Journal of Nanoparticle Research / Issue 11/2020
Print ISSN: 1388-0764
Electronic ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-020-05074-4

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