Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Electronic Materials
Published in: Journal of Electronic Materials 8/2004

01-08-2004 | Regular Issue Paper

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Authors: P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. -J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, J. Bude

Published in: Journal of Electronic Materials | Issue 8/2004

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …
previous article Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors
next article Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Metadata
Title
GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
Authors
P. D. Ye
G. D. Wilk
B. Yang
J. Kwo
H. -J. L. Gossmann
M. Frei
J. P. Mannaerts
M. Sergent
M. Hong
K. K. Ng
J. Bude
Publication date
01-08-2004
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 8/2004
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-004-0220-9

Other articles of this Issue 8/2004

Journal of Electronic Materials 8/2004 Go to the issue

Regular Issue Paper

Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Regular Issue Paper

Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition

Regular Issue Paper

Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammonia

Regular Issue Paper

Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

Regular Issue Paper

Creep properties of Sn-8Mass%Zn-3Mass%Bi lead-free alloy

Regular Issue Paper

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers