Issue 8/2004
Content (14 Articles)
Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition
Wei Liu, Soo Jin Chua, Xin Hai Zhang, Ji Zhang
Normal-incidence mid-infrared Ge quantum-dot photodetector
Fei Liu, Song Tong, Jianlin Liu, Kang L. Wang
Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers
Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, Archie L. Holmes Jr.
Infrared transmission spectra of Cd1−xZnxTe (x = 0.04) crystals
Li Yujie, Gu Zhi, Li Guoqiang, Jie Wangqi
Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs
K. D. Moiseev, A. Krier, Y. P. Yakovlev
Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammonia
Hans H. Funke, Jon Welchhans, Tadaharu Watanabe, Robert Torres, Virginia H. Houlding, Mark W. Raynor
Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects
J. Zhao, Y. Chang, G. Badano, S. Sivananthan, J. Markunas, S. Lewis, J. H. Dinan, P. S. Wijewarnasuriya, Y. Chen, G. Brill, N. Dhar
Germanium-on-insulator substrates by wafer bonding
Clarence J. Tracy, Peter Fejes, N. David Theodore, Papu Maniar, Eric Johnson, Albert J. Lamm, Anthony M. Paler, Igor J. Malik, Philip Ong
Simulation of the potting effect on the high-G MEMS accelerometer
Yuqi Jiang, Maohua Du, Le Luo, Xinxin Li
Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage
W. -M. Chen, P. Mccloskey, P. Byrne, P. Cheasty, G. Duffy, J. F. Rohan, J. Boardman, A. Mulcahy, S. C. O’Mathuna
Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors
Ho-Young Cha, Y. C. Choi, R. M. Thompson, V. Kaper, J. R. Shealy, L. F. Eastman, M. G. Spencer
GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. -J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, J. Bude
Formation of thermally stable Ni monosilicide using an inductively coupled plasma process
Young-Woo Ok, Chel-Jong Choi, Jeong-Tae Maeng, Tae-Yeon Seong
Creep properties of Sn-8Mass%Zn-3Mass%Bi lead-free alloy
Ikuo Shohji, Colin Gagg, William J. Plumbridge