22-08-2017
Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications
Published in: Journal of Computational Electronics | Issue 1/2018
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by