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Microsystem Technologies

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11-01-2018 | Technical Paper

Improved field emission properties of ZnO NRs using Al-doped and post oxygen annealing

Authors: Bahram Azizollah Ganji, Marziyeh Advand, Mohammadreza Kolahdouz

Published in: Microsystem Technologies | Issue 6/2018

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Abstract

In this paper, we synthesized Al doped ZnO (AZO) nanorods (NRs) and characterized their field emission properties. In addition, we considered the effect of post annealing process on the field emission characteristics of pure and doped ZnO NRs. Our results show that the field emission properties improve with the increased Al doping concentration in ZnO NRs. The field enhancement factor β is enhanced by ∼ 25% through 4% (weight ratio) Al doping. The field emission properties can be further improved by annealing in oxygen environment. Oxygen annealing modified the crystal structure of ZnO NRs and improves their field emission properties. Therefore, the 4 wt% Al doped sample with oxygen post annealing demonstrates the best field emission performance.

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Title: Improved field emission properties of ZnO NRs using Al-doped and post oxygen annealing
Authors: Bahram Azizollah Ganji
Marziyeh Advand
Mohammadreza Kolahdouz
Publication date: 11-01-2018
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 6/2018
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-018-3706-8

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