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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 8/2013

01-08-2013

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Authors: Dechao Yang, Hongwei Liang, Yu Qiu, Shiwei Song, Yang Liu, Rensheng Shen, Yingmin Luo, Guotong Du

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2013

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Abstract

GaN epilayers with porous SiNx interlayer and changed growth modes were grown by metal–organic chemical vapor deposition on c-plane sapphire substrates. Comparing with GaN epilayer grown by ordinary method, the crystalline qualities were significantly improved. The improvement was attributed to the reduction of the density of threading dislocations causing by over-growth process combining with delayed coalescence of individual GaN islands. The influence of the deposition and annealing of nucleation layer on the GaN regrowth was also discussed.
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Metadata
Title
Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode
Authors
Dechao Yang
Hongwei Liang
Yu Qiu
Shiwei Song
Yang Liu
Rensheng Shen
Yingmin Luo
Guotong Du
Publication date
01-08-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 8/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1160-z

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