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Published in:
29-03-2017
Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer
Published in: Journal of Materials Science: Materials in Electronics | Issue 14/2017
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Abstract
Low temperature Ge to SiO2 wafer bonding based on an intermediate ultra-thin Si layer (1 nm) which is grown on the Ge wafer (Si/Ge) by ultra-high vacuum chemical vapor deposition (UHV/CVD) system is demonstrated in this work. The formation and decomposition of the unstable GeO
x
layer are effectively restrained due to the incomplete oxidation of the covered ultra-thin Si layer after deposition. Therefore, a nearly voids-free bonding interface is observed after post annealing. The hydrophilicity of Si/Ge wafer surface is higher than that of the Ge wafer surface after the treatment of the diluted NH4OH solution. The more –OH groups on the Si/Ge wafer surface than that on the Ge wafer surface can be responsible for this feature. As a result, the high bonding strength of 4.39 MPa for the Ge/Si–SiO2 wafer pairs was achieved due to the formation of more covalent bonds (Si–O–Si) at the bonding interface after post annealing.