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Published in: Journal of Materials Science: Materials in Electronics 12/2019

07-05-2019

Interface-induced d0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates

Authors: Dong Wang, Yajuan Qiu, Wanjun Li, Hong Zhang, Guoping Qin, Haibo Ruan, Lijuan Ye, Chunyang Kong, Liang Fang

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2019

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Abstract

The origin of d0 ferromagnetism in ZnO material still remains an open question. Here, we report a systematic study of the structural, optical, Raman and magnetic properties of undoped ZnO films grown on a-, c-, m- and r-plane sapphire substrates by radio frequency magnetron sputtering at room temperature. It is found that the polarity of the substrate does not affect the preferential growth of undoped ZnO film along the c-axis, but it will obviously affect the species and concentration of intrinsic defects in films, thereby regulating the optical and Raman properties of undoped ZnO films. Magnetic measurement reveals that all undoped ZnO films exhibit clear hysteresis loops at room temperature, confirming the presence of room temperature ferromagnetism. Furthermore, the relationship between intrinsic defects and magnetic properties was discussed, which suggests that the observed ferromagnetic order has nothing to do with the internal intrinsic defects in undoped ZnO films, but is derived from the interface effects between the undoped ZnO films and the substrates.

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Metadata
Title
Interface-induced d0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates
Authors
Dong Wang
Yajuan Qiu
Wanjun Li
Hong Zhang
Guoping Qin
Haibo Ruan
Lijuan Ye
Chunyang Kong
Liang Fang
Publication date
07-05-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01451-5

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