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Published in: Journal of Materials Science: Materials in Electronics 12/2019

08-05-2019

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Authors: Shu-rui Cao, Xiao-yu Ke, Si-ting Ming, Duo-wei Wang, Tong Li, Bing-yan Liu, Yao Ma, Yun Li, Zhi-mei Yang, Min Gong, Ming-min Huang, Jin-shun Bi, Yan-nan Xu, Kai Xi, Gao-bo Xu, Sandip Majumdar

Published in: Journal of Materials Science: Materials in Electronics | Issue 12/2019

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Abstract

Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C–V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C–V and DLTS results show that Gamma ray leads to the degradation of trapping effect.

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Metadata
Title
Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS
Authors
Shu-rui Cao
Xiao-yu Ke
Si-ting Ming
Duo-wei Wang
Tong Li
Bing-yan Liu
Yao Ma
Yun Li
Zhi-mei Yang
Min Gong
Ming-min Huang
Jin-shun Bi
Yan-nan Xu
Kai Xi
Gao-bo Xu
Sandip Majumdar
Publication date
08-05-2019
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 12/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01450-6

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