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Optical and Quantum Electronics

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01-02-2021

Investigation of thermal annealing effects on MoO₃ thin film by atomic layer deposition

Author: Mustafa Demirtaş

Published in: Optical and Quantum Electronics | Issue 2/2021

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Abstract

Molybdenum oxide (MoO₃) thin films have been obtained by plasma-enhanced atomic layer deposition using precursors of Mo(CO)₆ and O₂ plasma at a reactor temperature of 160 °C. The MoO₃ thin films deposited on p-type silicon substrates with thermally grown 300 nm thick SiO₂ layer with different numbers of ALD growth cycles. Spectroscopic ellipsometer is used to characterize as-grown film thickness and refractive index. The as-grown films are treated at annealing temperatures at 300–600 °C. The structural properties of as-grown and annealed thin films have been characterized by optical microscopy, µRaman spectra, and atomic force microscopy.

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Title: Investigation of thermal annealing effects on MoO3 thin film by atomic layer deposition
Author: Mustafa Demirtaş
Publication date: 01-02-2021
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 2/2021
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-020-02717-7

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