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Published in:
01-07-2015
Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015
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Abstract
High voltage gradient ZnO–Bi2O3-based varistor ceramics doped with different amounts of B2O3 were prepared by the conventional ceramics processing at low temperature and their phase transformation, microstructure and electrical properties were investigated. B2O3 addition promoted the formation of a liquid phase along the grain boundary and triple junctions of the ZnO grains and improved electrical properties. ZnO–Bi2O3-based varistors with nonlinearity coefficients (α) exceeding 45, the leakage current (I
L) not more than 0.1 μA and breakdown fields ranging from 880 to 1450 V/mm were obtained by doping with 0.5–2 wt% B2O3 at the sintering temperature of 850 °C and dwelling time of 5 h.