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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 4/2008

01-04-2008

Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics

Authors: Hongwei Chen, Chuanren Yang, Chunlin Fu, Jun Shi, Jihua Zhang, Wenjian Leng

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2008

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Abstract

The crystalline structure and dielectric properties of BaZr x Ti1−x O3 ceramics with x = 0.05, 0.10, 0.15, and 0.20 were investigated. As zirconium increased, the a-axis lattice constant gradually increased, however, the c-axis lattice constant and c/a ratio gradually decreased. When x = 0.20, the crystal structures of the BZT ceramics are very close to cubic, different from the tetragonal structure when x < 0.20. The temperature dependence of the dielectric constant was studied and an enhanced diffuse phase transition behavior is found to be caused by the increased Zr content. The decreases of coercive electric field and remanent polarization were the result of increase of Zr/Ti ratio in BaZr x Ti1−x O3.
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Metadata
Title
Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics
Authors
Hongwei Chen
Chuanren Yang
Chunlin Fu
Jun Shi
Jihua Zhang
Wenjian Leng
Publication date
01-04-2008
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 4/2008
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-007-9348-8

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