Skip to main content

Journal of Materials Science: Materials in Electronics

Ausgabe 4/2008

Inhalt (19 Artikel)

Dependence of Cu/In ratio of structural and electrical characterization of CuInS2 crystal

K. Yoshino, K. Nomoto, A. Kinoshita, T. Ikari, Y. Akaki, T. Yoshitake

Raman scattering studies of ultrashallow Sb implants in strained Si

L. O’Reilly, N. S. Bennett, P. J. McNally, B. J. Sealy, N. E. B. Cowern, A. Lankinen, T. O. Tuomi

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film

Hirofumi Kakemoto, Tohru Higuchi, Hajime Shibata, Satoshi Wada, Takaaki Tsurumi

Microstructure and dielectric properties of BaTiO3-based X7R ceramics

Liying Chen, Shunhua Wu, Shuang Wang, Guoqing Wang

Creep property of composite solders reinforced by nano-sized particles

Yaowu Shi, Jianping Liu, Zhidong Xia, Yongping Lei, Fu Guo, Xiaoyan Li

Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics

Hongwei Chen, Chuanren Yang, Chunlin Fu, Jun Shi, Jihua Zhang, Wenjian Leng

Size effects in small scaled lead-free solder joints

P. Zimprich, A. Betzwar-Kotas, G. Khatibi, B. Weiss, H. Ipser

Neuer Inhalt