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Erschienen in:
01.04.2008
Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2008
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Abstract
The modification of thermoelectric figure of merit was estimated from enhanced mobility of [100] oriented beta-FeSi2 film. beta-FeSi2 on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS2 film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.