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Erschienen in:
01.04.2008
Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2008
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Abstract
Undoped and impurity-doped single crystals of Si
x
Ge1−x
with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin’s curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1.